Details
| Original language | English |
|---|---|
| Pages (from-to) | 1757-1761 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 16 |
| Issue number | 3 |
| Publication status | Published - May 1998 |
| Externally published | Yes |
Abstract
We have studied wet thermal oxidation between 700 and 1100°C of strained Si1-yCy (0≤y ≤0.02) layers grown by molecular beam epitaxy on Si(001) substrates. The oxidation kinetics and the refractive indices of the oxides grown on Si1-yCy were monitored by ellipsometry. They show no significant differences in comparison with oxides grown on silicon. Secondary ion mass spectroscopy and x-ray photoelectron spectroscopy reveal the appearance of carbon in the oxide. To find an appropriate temperature window for oxidation, we investigated the underlying Si1-yCy layers after oxidation by infrared absorption measurements. We observed a decrease of the substitutional carbon concentration for oxidation temperatures higher than 800°C. Thus, only a small temperature window for the growth of good thermal oxide on Si1-yCy layers is available. Infrared absorption measurements on the oxide vibrational modes reveal a small influence of the carbon concentration on the structural quality of the oxide.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
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In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 3, 05.1998, p. 1757-1761.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Oxidation of Si1-yCy(0≤y≤0.02) strained layers grown on Si(001)
AU - Pressel, K.
AU - Franz, M.
AU - Krüger, D.
AU - Osten, H. J.
AU - Garrido, B.
AU - Morante, J. R.
PY - 1998/5
Y1 - 1998/5
N2 - We have studied wet thermal oxidation between 700 and 1100°C of strained Si1-yCy (0≤y ≤0.02) layers grown by molecular beam epitaxy on Si(001) substrates. The oxidation kinetics and the refractive indices of the oxides grown on Si1-yCy were monitored by ellipsometry. They show no significant differences in comparison with oxides grown on silicon. Secondary ion mass spectroscopy and x-ray photoelectron spectroscopy reveal the appearance of carbon in the oxide. To find an appropriate temperature window for oxidation, we investigated the underlying Si1-yCy layers after oxidation by infrared absorption measurements. We observed a decrease of the substitutional carbon concentration for oxidation temperatures higher than 800°C. Thus, only a small temperature window for the growth of good thermal oxide on Si1-yCy layers is available. Infrared absorption measurements on the oxide vibrational modes reveal a small influence of the carbon concentration on the structural quality of the oxide.
AB - We have studied wet thermal oxidation between 700 and 1100°C of strained Si1-yCy (0≤y ≤0.02) layers grown by molecular beam epitaxy on Si(001) substrates. The oxidation kinetics and the refractive indices of the oxides grown on Si1-yCy were monitored by ellipsometry. They show no significant differences in comparison with oxides grown on silicon. Secondary ion mass spectroscopy and x-ray photoelectron spectroscopy reveal the appearance of carbon in the oxide. To find an appropriate temperature window for oxidation, we investigated the underlying Si1-yCy layers after oxidation by infrared absorption measurements. We observed a decrease of the substitutional carbon concentration for oxidation temperatures higher than 800°C. Thus, only a small temperature window for the growth of good thermal oxide on Si1-yCy layers is available. Infrared absorption measurements on the oxide vibrational modes reveal a small influence of the carbon concentration on the structural quality of the oxide.
UR - http://www.scopus.com/inward/record.url?scp=0000436138&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0000436138
VL - 16
SP - 1757
EP - 1761
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 3
ER -