Details
| Original language | English |
|---|---|
| Article number | 054004 |
| Journal | Physical review applied |
| Volume | 13 |
| Issue number | 5 |
| Publication status | Published - 4 May 2020 |
Abstract
Copper-indium-gallium-diselenide (CIGS) thin-film solar cells suffer from high recombination losses at the back contact and parasitic absorption in the front-contact layers. Dielectric passivation layers overcome these limitations and enable an efficient control over interface recombination, which becomes increasingly relevant as thin-film solar cells increase in efficiency and become thinner to reduce the consumption of precious resources. We present the optoelectronic and chemical interface properties of oxide-based passivation layers deposited by atomic layer deposition on CIGS. A suitable postdeposition annealing removes detrimental interface defects and leads to restructuring and oxidation of the CIGS surface. The optoelectronic interface properties are very similar for different passivation approaches, demonstrating that an efficient suppression of interface states is possible independent of the metal used in the passivating oxide. If aluminum oxide (Al2O3) is used as the passivation layer we confirm an additional field-effect passivation due to interface charges, resulting in an efficient interface passivation superior to that of a state-of-the-art cadmium-sulfide (CdS) buffer layer. Based on this chemical interface model we present a full-area rear-interface passivation layer without any contact patterning, resulting in a 1% absolute efficiency gain compared to a standard molybdenum back contact.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
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In: Physical review applied, Vol. 13, No. 5, 054004, 04.05.2020.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Oxidation as Key Mechanism for Efficient Interface Passivation in Cu(In,Ga)Se2 Thin-Film Solar Cells
AU - Werner, Florian
AU - Veith-Wolf, Boris
AU - Spindler, Conrad
AU - Barget, Michael R.
AU - Babbe, Finn
AU - Guillot, Jerome
AU - Schmidt, Jan
AU - Siebentritt, Susanne
N1 - Funding Information: We thank M. Melchiorre, M. Sood, and F. Ehre (University of Luxembourg) for assistance with chemical etching and N. Valle and B. El Adib (Luxembourg Institute of Science and Technology) for SIMS measurements. This study is funded by the Fonds National de la Recherche Luxembourg in the project “Surface passivation for thin film photovoltaics (SURPASS).”
PY - 2020/5/4
Y1 - 2020/5/4
N2 - Copper-indium-gallium-diselenide (CIGS) thin-film solar cells suffer from high recombination losses at the back contact and parasitic absorption in the front-contact layers. Dielectric passivation layers overcome these limitations and enable an efficient control over interface recombination, which becomes increasingly relevant as thin-film solar cells increase in efficiency and become thinner to reduce the consumption of precious resources. We present the optoelectronic and chemical interface properties of oxide-based passivation layers deposited by atomic layer deposition on CIGS. A suitable postdeposition annealing removes detrimental interface defects and leads to restructuring and oxidation of the CIGS surface. The optoelectronic interface properties are very similar for different passivation approaches, demonstrating that an efficient suppression of interface states is possible independent of the metal used in the passivating oxide. If aluminum oxide (Al2O3) is used as the passivation layer we confirm an additional field-effect passivation due to interface charges, resulting in an efficient interface passivation superior to that of a state-of-the-art cadmium-sulfide (CdS) buffer layer. Based on this chemical interface model we present a full-area rear-interface passivation layer without any contact patterning, resulting in a 1% absolute efficiency gain compared to a standard molybdenum back contact.
AB - Copper-indium-gallium-diselenide (CIGS) thin-film solar cells suffer from high recombination losses at the back contact and parasitic absorption in the front-contact layers. Dielectric passivation layers overcome these limitations and enable an efficient control over interface recombination, which becomes increasingly relevant as thin-film solar cells increase in efficiency and become thinner to reduce the consumption of precious resources. We present the optoelectronic and chemical interface properties of oxide-based passivation layers deposited by atomic layer deposition on CIGS. A suitable postdeposition annealing removes detrimental interface defects and leads to restructuring and oxidation of the CIGS surface. The optoelectronic interface properties are very similar for different passivation approaches, demonstrating that an efficient suppression of interface states is possible independent of the metal used in the passivating oxide. If aluminum oxide (Al2O3) is used as the passivation layer we confirm an additional field-effect passivation due to interface charges, resulting in an efficient interface passivation superior to that of a state-of-the-art cadmium-sulfide (CdS) buffer layer. Based on this chemical interface model we present a full-area rear-interface passivation layer without any contact patterning, resulting in a 1% absolute efficiency gain compared to a standard molybdenum back contact.
UR - http://www.scopus.com/inward/record.url?scp=85084236066&partnerID=8YFLogxK
U2 - 10.1103/PhysRevApplied.13.054004
DO - 10.1103/PhysRevApplied.13.054004
M3 - Article
VL - 13
JO - Physical review applied
JF - Physical review applied
SN - 2331-7019
IS - 5
M1 - 054004
ER -