Details
| Original language | English |
|---|---|
| Article number | 183901 |
| Journal | Applied physics letters |
| Volume | 103 |
| Issue number | 18 |
| Publication status | Published - 28 Oct 2013 |
Abstract
We characterize the electronic properties of crystalline silicon (c-Si)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) junctions by means of contactless carrier lifetime measurements. The measurements demonstrate that this type of heterojunction has an unexpectedly high open-circuit voltage (Voc) potential exceeding 690 mV, making it relevant for the implementation into high-efficiency c-Si solar cells. Hybrid n-type c-Si solar cells featuring a PEDOT:PSS hole-transport layer on the front reach an energy conversion efficiency of 12.3%. We observe a humidity-related degradation in cell efficiency during storage in air. The degradation is reduced by capping the entire device by an atomic-layer-deposited aluminum oxide film and is completely avoided in a dehumidified environment.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
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In: Applied physics letters, Vol. 103, No. 18, 183901, 28.10.2013.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Organic-silicon heterojunction solar cells
T2 - Open-circuit voltage potential and stability
AU - Schmidt, Jan
AU - Titova, Valeriya
AU - Zielke, Dimitri
PY - 2013/10/28
Y1 - 2013/10/28
N2 - We characterize the electronic properties of crystalline silicon (c-Si)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) junctions by means of contactless carrier lifetime measurements. The measurements demonstrate that this type of heterojunction has an unexpectedly high open-circuit voltage (Voc) potential exceeding 690 mV, making it relevant for the implementation into high-efficiency c-Si solar cells. Hybrid n-type c-Si solar cells featuring a PEDOT:PSS hole-transport layer on the front reach an energy conversion efficiency of 12.3%. We observe a humidity-related degradation in cell efficiency during storage in air. The degradation is reduced by capping the entire device by an atomic-layer-deposited aluminum oxide film and is completely avoided in a dehumidified environment.
AB - We characterize the electronic properties of crystalline silicon (c-Si)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) junctions by means of contactless carrier lifetime measurements. The measurements demonstrate that this type of heterojunction has an unexpectedly high open-circuit voltage (Voc) potential exceeding 690 mV, making it relevant for the implementation into high-efficiency c-Si solar cells. Hybrid n-type c-Si solar cells featuring a PEDOT:PSS hole-transport layer on the front reach an energy conversion efficiency of 12.3%. We observe a humidity-related degradation in cell efficiency during storage in air. The degradation is reduced by capping the entire device by an atomic-layer-deposited aluminum oxide film and is completely avoided in a dehumidified environment.
UR - http://www.scopus.com/inward/record.url?scp=84889647901&partnerID=8YFLogxK
U2 - 10.1063/1.4827303
DO - 10.1063/1.4827303
M3 - Article
AN - SCOPUS:84889647901
VL - 103
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 18
M1 - 183901
ER -