Details
| Original language | English |
|---|---|
| Article number | 114006 |
| Journal | Semiconductor Science and Technology |
| Volume | 23 |
| Issue number | 11 |
| Publication status | Published - 29 Oct 2008 |
Abstract
In this paper, we review the optical selection rules in semiconductor quantum wells and discuss the degree of electron spin polarization in dependence of the excitation energy and the optical excitation direction. We describe the very fast initial spin relaxation at large excess energies in very thin quantum wells and quantify the dependence on excitation density. As examples for optical studies and the rich spin dynamics in quantum wells, we present the electron spin dynamics in (110)-oriented GaAs quantum wells unveiling the intersubband spin relaxation mechanism and experiments on the complex spin dynamics of coupled electron-hole spins.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Materials Chemistry
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In: Semiconductor Science and Technology, Vol. 23, No. 11, 114006, 29.10.2008.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Optical orientation in quantum wells
AU - Hübner, Jens
AU - Oestreich, Michael
PY - 2008/10/29
Y1 - 2008/10/29
N2 - In this paper, we review the optical selection rules in semiconductor quantum wells and discuss the degree of electron spin polarization in dependence of the excitation energy and the optical excitation direction. We describe the very fast initial spin relaxation at large excess energies in very thin quantum wells and quantify the dependence on excitation density. As examples for optical studies and the rich spin dynamics in quantum wells, we present the electron spin dynamics in (110)-oriented GaAs quantum wells unveiling the intersubband spin relaxation mechanism and experiments on the complex spin dynamics of coupled electron-hole spins.
AB - In this paper, we review the optical selection rules in semiconductor quantum wells and discuss the degree of electron spin polarization in dependence of the excitation energy and the optical excitation direction. We describe the very fast initial spin relaxation at large excess energies in very thin quantum wells and quantify the dependence on excitation density. As examples for optical studies and the rich spin dynamics in quantum wells, we present the electron spin dynamics in (110)-oriented GaAs quantum wells unveiling the intersubband spin relaxation mechanism and experiments on the complex spin dynamics of coupled electron-hole spins.
UR - http://www.scopus.com/inward/record.url?scp=67649566915&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/23/11/114006
DO - 10.1088/0268-1242/23/11/114006
M3 - Article
AN - SCOPUS:67649566915
VL - 23
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 11
M1 - 114006
ER -