Details
Original language | English |
---|---|
Pages (from-to) | 167-170 |
Number of pages | 4 |
Journal | Materials Science and Engineering B |
Volume | 36 |
Issue number | 1-3 |
Publication status | Published - Jan 1996 |
Externally published | Yes |
Abstract
IR absorption was used to study the vibrational modes of substitutional carbon in strained layers of Si1-yCy (0 ≤ y = ≤ 0.015) alloys, which were grown by molecular beam epitaxy on Si (100) substrates. Satellite peaks that appear in the absorption spectrum close to the vibrational mode of substitutional carbon in the alloy are explained by a recently developed anharmonic Keating model. The interaction of substitutional carbon atoms gives rise to these peaks which can also be observed in Raman spectra. We estimate the carbon concentration and discuss the results. In photocurrent measurements on Si1-yCy/Si heterostructures we observe a shift of the absorption onset below the fundamental silicon band gap to lower energy with rising carbon concentration.
Keywords
- Heterostructures, Semiconductors, Silicon
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Mechanics of Materials
- Engineering(all)
- Mechanical Engineering
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In: Materials Science and Engineering B, Vol. 36, No. 1-3, 01.1996, p. 167-170.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Optical investigation of Si1-yCy alloys (0 ≤ y ≤ 0.015)
AU - Pressel, K.
AU - Dietrich, B.
AU - Rücker, H.
AU - Methfessel, M.
AU - Osten, H. J.
PY - 1996/1
Y1 - 1996/1
N2 - IR absorption was used to study the vibrational modes of substitutional carbon in strained layers of Si1-yCy (0 ≤ y = ≤ 0.015) alloys, which were grown by molecular beam epitaxy on Si (100) substrates. Satellite peaks that appear in the absorption spectrum close to the vibrational mode of substitutional carbon in the alloy are explained by a recently developed anharmonic Keating model. The interaction of substitutional carbon atoms gives rise to these peaks which can also be observed in Raman spectra. We estimate the carbon concentration and discuss the results. In photocurrent measurements on Si1-yCy/Si heterostructures we observe a shift of the absorption onset below the fundamental silicon band gap to lower energy with rising carbon concentration.
AB - IR absorption was used to study the vibrational modes of substitutional carbon in strained layers of Si1-yCy (0 ≤ y = ≤ 0.015) alloys, which were grown by molecular beam epitaxy on Si (100) substrates. Satellite peaks that appear in the absorption spectrum close to the vibrational mode of substitutional carbon in the alloy are explained by a recently developed anharmonic Keating model. The interaction of substitutional carbon atoms gives rise to these peaks which can also be observed in Raman spectra. We estimate the carbon concentration and discuss the results. In photocurrent measurements on Si1-yCy/Si heterostructures we observe a shift of the absorption onset below the fundamental silicon band gap to lower energy with rising carbon concentration.
KW - Heterostructures
KW - Semiconductors
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=23644461602&partnerID=8YFLogxK
U2 - 10.1016/0921-5107(95)01280-X
DO - 10.1016/0921-5107(95)01280-X
M3 - Article
AN - SCOPUS:23644461602
VL - 36
SP - 167
EP - 170
JO - Materials Science and Engineering B
JF - Materials Science and Engineering B
SN - 0921-5107
IS - 1-3
ER -