Details
| Original language | English |
|---|---|
| Pages (from-to) | 681-688 |
| Number of pages | 8 |
| Journal | Journal of crystal growth |
| Volume | 169 |
| Issue number | 4 |
| Publication status | Published - 2 Dec 1996 |
| Externally published | Yes |
Abstract
We report on optical in situ measurements of temperature and thickness in silicon molecular beam epitaxy (MBE) by a combination of pyrometry and reflectometry. This method is able to respond to fast temperature changes on the wafer in real-time, and is sensitive enough to monitor even small temperature variations (less than 1°C), We investigate the influence of different MBE components and system operations on the wafer temperature, such as hot cells, electron beam evaporator and LN2 cooling, etc. The in situ thickness measurements succeeded only for layers thicker than a quarter wavelength (> 60 nm). An attempt to measure the optical constants and layer thickness in real-time by fitting the oscillating reflectivity signal during SiGe layer deposition failed due to a poor signal-to-noise ratio, caused by wafer wobbling, scattered light from hot cells and other sources. The optical constants of different SiGe layers were determined after deposition.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Chemistry(all)
- Inorganic Chemistry
- Materials Science(all)
- Materials Chemistry
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In: Journal of crystal growth, Vol. 169, No. 4, 02.12.1996, p. 681-688.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Optical in situ measurements of temperature and layer thickness in Si molecular beam epitaxy
AU - Kim, Myeongcheol
AU - Thieme, H. J.
AU - Lippert, G.
AU - Osten, H. J.
PY - 1996/12/2
Y1 - 1996/12/2
N2 - We report on optical in situ measurements of temperature and thickness in silicon molecular beam epitaxy (MBE) by a combination of pyrometry and reflectometry. This method is able to respond to fast temperature changes on the wafer in real-time, and is sensitive enough to monitor even small temperature variations (less than 1°C), We investigate the influence of different MBE components and system operations on the wafer temperature, such as hot cells, electron beam evaporator and LN2 cooling, etc. The in situ thickness measurements succeeded only for layers thicker than a quarter wavelength (> 60 nm). An attempt to measure the optical constants and layer thickness in real-time by fitting the oscillating reflectivity signal during SiGe layer deposition failed due to a poor signal-to-noise ratio, caused by wafer wobbling, scattered light from hot cells and other sources. The optical constants of different SiGe layers were determined after deposition.
AB - We report on optical in situ measurements of temperature and thickness in silicon molecular beam epitaxy (MBE) by a combination of pyrometry and reflectometry. This method is able to respond to fast temperature changes on the wafer in real-time, and is sensitive enough to monitor even small temperature variations (less than 1°C), We investigate the influence of different MBE components and system operations on the wafer temperature, such as hot cells, electron beam evaporator and LN2 cooling, etc. The in situ thickness measurements succeeded only for layers thicker than a quarter wavelength (> 60 nm). An attempt to measure the optical constants and layer thickness in real-time by fitting the oscillating reflectivity signal during SiGe layer deposition failed due to a poor signal-to-noise ratio, caused by wafer wobbling, scattered light from hot cells and other sources. The optical constants of different SiGe layers were determined after deposition.
UR - http://www.scopus.com/inward/record.url?scp=0030566527&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(96)00478-2
DO - 10.1016/S0022-0248(96)00478-2
M3 - Article
AN - SCOPUS:0030566527
VL - 169
SP - 681
EP - 688
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
IS - 4
ER -