Details
| Original language | English |
|---|---|
| Title of host publication | 2009 13th European Conference on Power Electronics and Applications, EPE '09 |
| Publication status | Published - 2009 |
| Event | 2009 13th European Conference on Power Electronics and Applications, EPE '09 - Barcelona, Spain Duration: 8 Sept 2009 → 10 Sept 2009 |
Publication series
| Name | 2009 13th European Conference on Power Electronics and Applications, EPE '09 |
|---|
Abstract
This paper deals with a method to derive the junction temperature of an IGBT while the device is in operation. In order to achieve this the gate-emitter voltage, the collector current and the collector-emitter voltage are digitized on the driver board. Due to the fact that material parameters vary with temperature, the waveforms of the switching transients vary with temperature, too. Thus, there is a correlation between the temperature and the switching waveforms. Evaluating temperature sensitive electrical parameters (TSEP), the working temperature of the device can be estimated.
Keywords
- Discrete power device, High power discrete device, IGBT, Measurement, Mos controlled device
ASJC Scopus subject areas
- Energy(all)
- Energy Engineering and Power Technology
- Engineering(all)
- Electrical and Electronic Engineering
Cite this
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2009 13th European Conference on Power Electronics and Applications, EPE '09. 2009. 5278815 (2009 13th European Conference on Power Electronics and Applications, EPE '09).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - On-line junction temperature measurement of IGBTs based on temperature sensitive electrical parameters
AU - Kuhn, Harald
AU - Mertens, Axel
PY - 2009
Y1 - 2009
N2 - This paper deals with a method to derive the junction temperature of an IGBT while the device is in operation. In order to achieve this the gate-emitter voltage, the collector current and the collector-emitter voltage are digitized on the driver board. Due to the fact that material parameters vary with temperature, the waveforms of the switching transients vary with temperature, too. Thus, there is a correlation between the temperature and the switching waveforms. Evaluating temperature sensitive electrical parameters (TSEP), the working temperature of the device can be estimated.
AB - This paper deals with a method to derive the junction temperature of an IGBT while the device is in operation. In order to achieve this the gate-emitter voltage, the collector current and the collector-emitter voltage are digitized on the driver board. Due to the fact that material parameters vary with temperature, the waveforms of the switching transients vary with temperature, too. Thus, there is a correlation between the temperature and the switching waveforms. Evaluating temperature sensitive electrical parameters (TSEP), the working temperature of the device can be estimated.
KW - Discrete power device
KW - High power discrete device
KW - IGBT
KW - Measurement
KW - Mos controlled device
UR - http://www.scopus.com/inward/record.url?scp=72949093814&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:72949093814
SN - 9781424444328
T3 - 2009 13th European Conference on Power Electronics and Applications, EPE '09
BT - 2009 13th European Conference on Power Electronics and Applications, EPE '09
T2 - 2009 13th European Conference on Power Electronics and Applications, EPE '09
Y2 - 8 September 2009 through 10 September 2009
ER -