Details
| Original language | English |
|---|---|
| Pages (from-to) | 127-129 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 31 |
| Issue number | 2 |
| Publication status | Published - Feb 1992 |
| Externally published | Yes |
Abstract
The cleaved edge of a GaAlSb/InAs/GaAlSb heterostructure contains a surface channel of accumulated electrons with the channel width given by the thickness of the InAs well. We achieved such structures and studied the temperature and magnetic-field dependence of the resistance along this edge. A strong negative magnetoresistance and well defined conductance fluctuations were observed, which were interpreted consistently by one-dimensional electron conduction.
Keywords
- Electronic conductance, Lll-V compound semiconductors, Low dimensional structures, Molecular beam epitaxy, Quantum transport, Semiconductor heterostructures
ASJC Scopus subject areas
- Engineering(all)
- General Engineering
- Physics and Astronomy(all)
- General Physics and Astronomy
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In: Japanese Journal of Applied Physics, Vol. 31, No. 2, 02.1992, p. 127-129.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - One-dimensional conduction on the cleaved edge of inasquantum wells
AU - Haug, R. J.
AU - Munekata, H.
AU - Chang, L. L.
PY - 1992/2
Y1 - 1992/2
N2 - The cleaved edge of a GaAlSb/InAs/GaAlSb heterostructure contains a surface channel of accumulated electrons with the channel width given by the thickness of the InAs well. We achieved such structures and studied the temperature and magnetic-field dependence of the resistance along this edge. A strong negative magnetoresistance and well defined conductance fluctuations were observed, which were interpreted consistently by one-dimensional electron conduction.
AB - The cleaved edge of a GaAlSb/InAs/GaAlSb heterostructure contains a surface channel of accumulated electrons with the channel width given by the thickness of the InAs well. We achieved such structures and studied the temperature and magnetic-field dependence of the resistance along this edge. A strong negative magnetoresistance and well defined conductance fluctuations were observed, which were interpreted consistently by one-dimensional electron conduction.
KW - Electronic conductance
KW - Lll-V compound semiconductors
KW - Low dimensional structures
KW - Molecular beam epitaxy
KW - Quantum transport
KW - Semiconductor heterostructures
UR - http://www.scopus.com/inward/record.url?scp=0026821235&partnerID=8YFLogxK
U2 - 10.1143/JJAP.31.L127
DO - 10.1143/JJAP.31.L127
M3 - Article
AN - SCOPUS:0026821235
VL - 31
SP - 127
EP - 129
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 2
ER -