Details
| Original language | English |
|---|---|
| Article number | 1700058 |
| Journal | Physica Status Solidi (A) Applications and Materials Science |
| Volume | 214 |
| Issue number | 8 |
| Publication status | Published - Aug 2017 |
Abstract
We investigate the passivation quality of hole-collecting junctions consisting of thermally or wet-chemically grown interfacial oxides, sandwiched between a monocrystalline-Si substrate and a p-type polycrystalline-silicon (Si) layer. The three different approaches for polycrystalline-Si preparation are compared: the plasma-enhanced chemical vapor deposition (PECVD) of in situ p+-type boron-doped amorphous Si layers, the low pressure chemical vapor deposition (LPCVD) of in situ p+-type B-doped polycrystalline Si layers, and the LPCVD of intrinsic amorphous Si, subsequently ion-implanted with boron. We observe the lowest J0e values of 3.8 fA cm−2 on thermally grown interfacial oxide on planar surfaces for the case of intrinsic amorphous Si deposited by LPCVD and subsequently implanted with boron. Also, we obtain a similar high passivation of p+-type poly-Si junctions on wet-chemically grown oxides as well as for all the investigated polycrystalline-Si deposition approaches. Conversely, on alkaline-textured surfaces, J0e is at least 4 times higher compared to planar surfaces. This finding holds for all the junction preparation methods investigated. We show that the higher J0e on textured surfaces can be attributed to a poorer passivation of the p+ poly/c-Si stacks on (111) when compared to (100) surfaces.
Keywords
- passivating contact, passivation, polysilicon, silicon solar cell
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Materials Science(all)
- Surfaces, Coatings and Films
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Materials Chemistry
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In: Physica Status Solidi (A) Applications and Materials Science, Vol. 214, No. 8, 1700058, 08.2017.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - On the recombination behavior of p+-type polysilicon on oxide junctions deposited by different methods on textured and planar surfaces
AU - Larionova, Yevgeniya
AU - Turcu, Mircea
AU - Reiter, Sina
AU - Brendel, Rolf
AU - Tetzlaff, Dominic
AU - Krügener, Jan
AU - Wietler, Tobias
AU - Höhne, Uwe
AU - Kähler, Jan Dirk
AU - Peibst, Robby
N1 - Funding information: The authors would like to thank B. Gehring and R. Winter for their help with the processing of the test structures. This work was financially supported by the Federal Ministry for Economic Affairs and Energy (BMWi) under contact number 0325702.
PY - 2017/8
Y1 - 2017/8
N2 - We investigate the passivation quality of hole-collecting junctions consisting of thermally or wet-chemically grown interfacial oxides, sandwiched between a monocrystalline-Si substrate and a p-type polycrystalline-silicon (Si) layer. The three different approaches for polycrystalline-Si preparation are compared: the plasma-enhanced chemical vapor deposition (PECVD) of in situ p+-type boron-doped amorphous Si layers, the low pressure chemical vapor deposition (LPCVD) of in situ p+-type B-doped polycrystalline Si layers, and the LPCVD of intrinsic amorphous Si, subsequently ion-implanted with boron. We observe the lowest J0e values of 3.8 fA cm−2 on thermally grown interfacial oxide on planar surfaces for the case of intrinsic amorphous Si deposited by LPCVD and subsequently implanted with boron. Also, we obtain a similar high passivation of p+-type poly-Si junctions on wet-chemically grown oxides as well as for all the investigated polycrystalline-Si deposition approaches. Conversely, on alkaline-textured surfaces, J0e is at least 4 times higher compared to planar surfaces. This finding holds for all the junction preparation methods investigated. We show that the higher J0e on textured surfaces can be attributed to a poorer passivation of the p+ poly/c-Si stacks on (111) when compared to (100) surfaces.
AB - We investigate the passivation quality of hole-collecting junctions consisting of thermally or wet-chemically grown interfacial oxides, sandwiched between a monocrystalline-Si substrate and a p-type polycrystalline-silicon (Si) layer. The three different approaches for polycrystalline-Si preparation are compared: the plasma-enhanced chemical vapor deposition (PECVD) of in situ p+-type boron-doped amorphous Si layers, the low pressure chemical vapor deposition (LPCVD) of in situ p+-type B-doped polycrystalline Si layers, and the LPCVD of intrinsic amorphous Si, subsequently ion-implanted with boron. We observe the lowest J0e values of 3.8 fA cm−2 on thermally grown interfacial oxide on planar surfaces for the case of intrinsic amorphous Si deposited by LPCVD and subsequently implanted with boron. Also, we obtain a similar high passivation of p+-type poly-Si junctions on wet-chemically grown oxides as well as for all the investigated polycrystalline-Si deposition approaches. Conversely, on alkaline-textured surfaces, J0e is at least 4 times higher compared to planar surfaces. This finding holds for all the junction preparation methods investigated. We show that the higher J0e on textured surfaces can be attributed to a poorer passivation of the p+ poly/c-Si stacks on (111) when compared to (100) surfaces.
KW - passivating contact
KW - passivation
KW - polysilicon
KW - silicon solar cell
UR - http://www.scopus.com/inward/record.url?scp=85019023512&partnerID=8YFLogxK
U2 - 10.1002/pssa.201700058
DO - 10.1002/pssa.201700058
M3 - Article
AN - SCOPUS:85019023512
VL - 214
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
SN - 1862-6300
IS - 8
M1 - 1700058
ER -