Details
| Original language | English |
|---|---|
| Article number | 165702 |
| Journal | Journal of applied physics |
| Volume | 131 |
| Issue number | 16 |
| Publication status | Published - 27 Apr 2022 |
Abstract
Silicon samples after fast-firing with a hydrogen-rich silicon nitride layer on their surfaces can contain high concentrations of hydrogen (up to 6 × 1015 cm-3 in this study). Directly after fast-firing, this hydrogen is mostly present in a neutral dimeric state. Subsequent dark annealing applied in a temperature range between 140 and 175 °C leads to a conversion of dimers into HB pairs, which means that a significant number of boron acceptors are electrically inactive. The concentration of inactive boron, the hydrogen-boron (HB) pair concentration [HB], can thus be determined by measuring the change in specific resistivity before and after annealing. In our study, after the initial anneal for HB pair formation, the same samples are subsequently annealed at stepwise increasing higher temperatures, which leads to a partial backward conversion of HB pairs into neutral hydrogen dimers. This is indicated by a gradual reduction of the resistivity upon increasing the annealing temperature. By measuring the transient curves [HB](t) during each temperature step on samples with different boron content, we extract the parameters for the exchange between the HB pairs and the hydrogen dimers within the framework of our presented physical model. Apart from the backward formation of hydrogen dimers, from HB pairs upon increasing temperature, prolonged annealing at the same temperature leads to a transition of HB pairs into a more stable form of hydrogen dimers, compared to the initial form after fast-firing. This transition is also included in our proposed defect model.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
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In: Journal of applied physics, Vol. 131, No. 16, 165702, 27.04.2022.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - On the kinetics of the exchange of hydrogen between hydrogen-boron pairs and hydrogen dimers in crystalline silicon
AU - Walter, Dominic C.
AU - Voronkov, Vladimir V.
AU - Falster, Robert
AU - Bredemeier, Dennis
AU - Schmidt, Jan
N1 - Funding Information: D. C. Walter, D. Bredemeier and J. Schmidt acknowledge the financial support by the German State of Lower Saxony.
PY - 2022/4/27
Y1 - 2022/4/27
N2 - Silicon samples after fast-firing with a hydrogen-rich silicon nitride layer on their surfaces can contain high concentrations of hydrogen (up to 6 × 1015 cm-3 in this study). Directly after fast-firing, this hydrogen is mostly present in a neutral dimeric state. Subsequent dark annealing applied in a temperature range between 140 and 175 °C leads to a conversion of dimers into HB pairs, which means that a significant number of boron acceptors are electrically inactive. The concentration of inactive boron, the hydrogen-boron (HB) pair concentration [HB], can thus be determined by measuring the change in specific resistivity before and after annealing. In our study, after the initial anneal for HB pair formation, the same samples are subsequently annealed at stepwise increasing higher temperatures, which leads to a partial backward conversion of HB pairs into neutral hydrogen dimers. This is indicated by a gradual reduction of the resistivity upon increasing the annealing temperature. By measuring the transient curves [HB](t) during each temperature step on samples with different boron content, we extract the parameters for the exchange between the HB pairs and the hydrogen dimers within the framework of our presented physical model. Apart from the backward formation of hydrogen dimers, from HB pairs upon increasing temperature, prolonged annealing at the same temperature leads to a transition of HB pairs into a more stable form of hydrogen dimers, compared to the initial form after fast-firing. This transition is also included in our proposed defect model.
AB - Silicon samples after fast-firing with a hydrogen-rich silicon nitride layer on their surfaces can contain high concentrations of hydrogen (up to 6 × 1015 cm-3 in this study). Directly after fast-firing, this hydrogen is mostly present in a neutral dimeric state. Subsequent dark annealing applied in a temperature range between 140 and 175 °C leads to a conversion of dimers into HB pairs, which means that a significant number of boron acceptors are electrically inactive. The concentration of inactive boron, the hydrogen-boron (HB) pair concentration [HB], can thus be determined by measuring the change in specific resistivity before and after annealing. In our study, after the initial anneal for HB pair formation, the same samples are subsequently annealed at stepwise increasing higher temperatures, which leads to a partial backward conversion of HB pairs into neutral hydrogen dimers. This is indicated by a gradual reduction of the resistivity upon increasing the annealing temperature. By measuring the transient curves [HB](t) during each temperature step on samples with different boron content, we extract the parameters for the exchange between the HB pairs and the hydrogen dimers within the framework of our presented physical model. Apart from the backward formation of hydrogen dimers, from HB pairs upon increasing temperature, prolonged annealing at the same temperature leads to a transition of HB pairs into a more stable form of hydrogen dimers, compared to the initial form after fast-firing. This transition is also included in our proposed defect model.
UR - http://www.scopus.com/inward/record.url?scp=85129611470&partnerID=8YFLogxK
U2 - 10.1063/5.0086307
DO - 10.1063/5.0086307
M3 - Article
AN - SCOPUS:85129611470
VL - 131
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 16
M1 - 165702
ER -