Details
| Original language | English |
|---|---|
| Pages (from-to) | 33-36 |
| Number of pages | 4 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 173 |
| Publication status | Published - Dec 2017 |
Abstract
We determine the equilibrium concentration of the BO defect in boron-doped Czochralski-grown silicon after prolonged (up to 150 h) annealing at relatively low temperatures between 200 and 300 °C. We show that after sample processing, the BO concentration has not necessarily reached the equilibrium state. The actually reached state depends on the detailed temperature profile of the last temperature treatment before the light-induced degradation (LID) is performed. For the investigated Cz-Si materials with base resistivities ranging between 0.5 and 2.5 Ω cm, we observe that an annealing step at 200 °C for 50 h establishes the equilibrium, independent of the base resistivity. Experiments performed at different temperatures reveal that the equilibrium defect concentration decreases with increasing annealing temperature. This observation can be understood, assuming a mobile species which is distributed between at least two different sinks. A possible defect model is discussed.
Keywords
- Boron-oxygen defects, Carrier lifetime, Czochralski silicon
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Materials Science(all)
- Surfaces, Coatings and Films
Sustainable Development Goals
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In: Solar Energy Materials and Solar Cells, Vol. 173, 12.2017, p. 33-36.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - On the equilibrium concentration of boron-oxygen defects in crystalline silicon
AU - Walter, Dominic C.
AU - Falster, Robert
AU - Voronkov, Vladimir V.
AU - Schmidt, Jan
N1 - Publisher Copyright: © 2017 Elsevier B.V.
PY - 2017/12
Y1 - 2017/12
N2 - We determine the equilibrium concentration of the BO defect in boron-doped Czochralski-grown silicon after prolonged (up to 150 h) annealing at relatively low temperatures between 200 and 300 °C. We show that after sample processing, the BO concentration has not necessarily reached the equilibrium state. The actually reached state depends on the detailed temperature profile of the last temperature treatment before the light-induced degradation (LID) is performed. For the investigated Cz-Si materials with base resistivities ranging between 0.5 and 2.5 Ω cm, we observe that an annealing step at 200 °C for 50 h establishes the equilibrium, independent of the base resistivity. Experiments performed at different temperatures reveal that the equilibrium defect concentration decreases with increasing annealing temperature. This observation can be understood, assuming a mobile species which is distributed between at least two different sinks. A possible defect model is discussed.
AB - We determine the equilibrium concentration of the BO defect in boron-doped Czochralski-grown silicon after prolonged (up to 150 h) annealing at relatively low temperatures between 200 and 300 °C. We show that after sample processing, the BO concentration has not necessarily reached the equilibrium state. The actually reached state depends on the detailed temperature profile of the last temperature treatment before the light-induced degradation (LID) is performed. For the investigated Cz-Si materials with base resistivities ranging between 0.5 and 2.5 Ω cm, we observe that an annealing step at 200 °C for 50 h establishes the equilibrium, independent of the base resistivity. Experiments performed at different temperatures reveal that the equilibrium defect concentration decreases with increasing annealing temperature. This observation can be understood, assuming a mobile species which is distributed between at least two different sinks. A possible defect model is discussed.
KW - Boron-oxygen defects
KW - Carrier lifetime
KW - Czochralski silicon
UR - http://www.scopus.com/inward/record.url?scp=85023762223&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2017.06.036
DO - 10.1016/j.solmat.2017.06.036
M3 - Article
VL - 173
SP - 33
EP - 36
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
ER -