Details
| Original language | English |
|---|---|
| Pages (from-to) | 327-340 |
| Number of pages | 14 |
| Journal | Progress in Photovoltaics: Research and Applications |
| Volume | 31 |
| Issue number | 4 |
| Publication status | Published - 1 Mar 2023 |
Abstract
ISFH is following a distinct cell development roadmap, which comprises—as a short-term concept—the combination of an n-type doped electron-collecting poly-Si on oxide (POLO) junction with an Al-alloyed p+ junction for hole collection. This combination can be integrated either in front- and back-contacted back junction cells (POLO-BJ) or in interdigitated back-contacted cells (POLO-IBC). Here, we present recent progress with these two cell concepts. We report on a certified M2-sized 22.9% efficient POLO-BJ cell with a temperature coefficient TCη of only −(0.3 ± 0.02) %rel/K and a certified 23.7% (4 cm2 d.a.) efficient POLO-IBC cell. We discuss various specific conceptual aspects of this technology and present a simulation-based sensitivity analysis for quantities related to the quality of the hole-collecting alloyed Al-p+ junction which are subject to continuous improvement and thus hard to predict exactly. We report that the measured pseudo fill factor values decrease more due to metallization than would be expected from recombination in the metallized regions with an ideality factor of one only. The gap to pseudo fill factor values that are theoretically achievable at the respective open-circuit voltages is 1.1%abs (Ga-doped wafer) for POLO-IBC and 1.4%abs (B-doped wafer) to 2%abs (Ga-doped wafer) for POLO-BJ. With an embedded blocking layer for Ag crystallites in the poly-Si, we present a concept to reduce this gap.
Keywords
- efficiency potential, passivating contacts, POLO, poly-Si, solar cell development, temperature coefficient
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
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In: Progress in Photovoltaics: Research and Applications, Vol. 31, No. 4, 01.03.2023, p. 327-340.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - On the chances and challenges of combining electron-collecting nPOLO and hole-collecting Al-p+ contacts in highly efficient p-type c-Si solar cells
AU - Peibst, Robby
AU - Haase, Felix
AU - Min, Byungsul
AU - Hollemann, Christina
AU - Brendemühl, Till
AU - Bothe, Karsten
AU - Brendel, Rolf
N1 - Funding Information: We would like to thank Anja Christ, Annika Raugewitz, Hilke Fischer,Magalie Pollmann, Renate Winter, Bianca Gehring, and ThomasFriedrich for sample processing and David Sylla and Tobias Neubert forlaser structuring andI–Vmeasurements. We furthermore would like tothank David Hinken, Dominic Walter, and Michael Rienäcker for valu-able discussions. Also, we would like to thank Raymond Zieseniß, GuidoGlowatzki and Jan Krügener from the Institute for Electronic Materialsand Devices of the Leibniz University Hannover for the excellent coop-eration and the supply of LPCVD-based poly-Si layers.We also thank TOYO Aluminium for providing the Al-paste,Heraeus and Dupont, for providing the Ag-pastes, and Longi for pro-viding the wafer material.This work was funded by the German Federal Ministry for Eco-nomic Affairs and Energy (BMWi) under contact number 0324275A(Street) and contact number 03EE1012A (NanoPERC), as well as bythe state of Lower Saxony. Open Access funding enabled and organized by Projekt DEAL.
PY - 2023/3/1
Y1 - 2023/3/1
N2 - ISFH is following a distinct cell development roadmap, which comprises—as a short-term concept—the combination of an n-type doped electron-collecting poly-Si on oxide (POLO) junction with an Al-alloyed p+ junction for hole collection. This combination can be integrated either in front- and back-contacted back junction cells (POLO-BJ) or in interdigitated back-contacted cells (POLO-IBC). Here, we present recent progress with these two cell concepts. We report on a certified M2-sized 22.9% efficient POLO-BJ cell with a temperature coefficient TCη of only −(0.3 ± 0.02) %rel/K and a certified 23.7% (4 cm2 d.a.) efficient POLO-IBC cell. We discuss various specific conceptual aspects of this technology and present a simulation-based sensitivity analysis for quantities related to the quality of the hole-collecting alloyed Al-p+ junction which are subject to continuous improvement and thus hard to predict exactly. We report that the measured pseudo fill factor values decrease more due to metallization than would be expected from recombination in the metallized regions with an ideality factor of one only. The gap to pseudo fill factor values that are theoretically achievable at the respective open-circuit voltages is 1.1%abs (Ga-doped wafer) for POLO-IBC and 1.4%abs (B-doped wafer) to 2%abs (Ga-doped wafer) for POLO-BJ. With an embedded blocking layer for Ag crystallites in the poly-Si, we present a concept to reduce this gap.
AB - ISFH is following a distinct cell development roadmap, which comprises—as a short-term concept—the combination of an n-type doped electron-collecting poly-Si on oxide (POLO) junction with an Al-alloyed p+ junction for hole collection. This combination can be integrated either in front- and back-contacted back junction cells (POLO-BJ) or in interdigitated back-contacted cells (POLO-IBC). Here, we present recent progress with these two cell concepts. We report on a certified M2-sized 22.9% efficient POLO-BJ cell with a temperature coefficient TCη of only −(0.3 ± 0.02) %rel/K and a certified 23.7% (4 cm2 d.a.) efficient POLO-IBC cell. We discuss various specific conceptual aspects of this technology and present a simulation-based sensitivity analysis for quantities related to the quality of the hole-collecting alloyed Al-p+ junction which are subject to continuous improvement and thus hard to predict exactly. We report that the measured pseudo fill factor values decrease more due to metallization than would be expected from recombination in the metallized regions with an ideality factor of one only. The gap to pseudo fill factor values that are theoretically achievable at the respective open-circuit voltages is 1.1%abs (Ga-doped wafer) for POLO-IBC and 1.4%abs (B-doped wafer) to 2%abs (Ga-doped wafer) for POLO-BJ. With an embedded blocking layer for Ag crystallites in the poly-Si, we present a concept to reduce this gap.
KW - efficiency potential
KW - passivating contacts
KW - POLO
KW - poly-Si
KW - solar cell development
KW - temperature coefficient
UR - http://www.scopus.com/inward/record.url?scp=85124985123&partnerID=8YFLogxK
U2 - 10.1002/pip.3545
DO - 10.1002/pip.3545
M3 - Article
AN - SCOPUS:85124985123
VL - 31
SP - 327
EP - 340
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
SN - 1062-7995
IS - 4
ER -