Numerical study of transient behaviour of molten zone during industrial FZ process for large silicon crystal growth

Research output: Contribution to journalConference articleResearchpeer review

Authors

  • A. Rudevičs
  • A. Muižnieks
  • G. Ratnieks
  • A. Mühlbauer
  • Th Wetzel

External Research Organisations

  • University of Latvia
  • Siltronic AG
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Details

Original languageEnglish
Pages (from-to)54-59
Number of pages6
JournalJournal of crystal growth
Volume266
Issue number1-3
Early online date8 Apr 2004
Publication statusPublished - 15 May 2004
EventFourth International Workshop on Modeling - Kyushu, Japan
Duration: 4 Nov 20037 Nov 2003

Abstract

The fully transient axisymmetric model has been developed for calculation of phase boundaries in large (up to 200mm diameter) industrial floating zone (FZ) silicon single crystal growth with the needle-eye technique. The transient model is implemented in a specialized computer program. The model and program are based on a previously developed model and program for steady-state FZ process calculations. This transient approach allows studying of such substantially time-dependent process phases as the growth of the starting and ending cones of the crystal rod, which are particularly important for growth of large crystals in practice. Numerous calculations are carried out and the results for reducing crystal diameter during growth process are presented.

Keywords

    A1. Computer simulation, A1. Phase boundaries, A1. Transient modelling, A2. Floating zone technique

ASJC Scopus subject areas

Cite this

Numerical study of transient behaviour of molten zone during industrial FZ process for large silicon crystal growth. / Rudevičs, A.; Muižnieks, A.; Ratnieks, G. et al.
In: Journal of crystal growth, Vol. 266, No. 1-3, 15.05.2004, p. 54-59.

Research output: Contribution to journalConference articleResearchpeer review

Rudevičs A, Muižnieks A, Ratnieks G, Mühlbauer A, Wetzel T. Numerical study of transient behaviour of molten zone during industrial FZ process for large silicon crystal growth. Journal of crystal growth. 2004 May 15;266(1-3):54-59. Epub 2004 Apr 8. doi: 10.1016/j.jcrysgro.2004.02.029
Rudevičs, A. ; Muižnieks, A. ; Ratnieks, G. et al. / Numerical study of transient behaviour of molten zone during industrial FZ process for large silicon crystal growth. In: Journal of crystal growth. 2004 ; Vol. 266, No. 1-3. pp. 54-59.
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@article{d0a323a9d8534beaae946960d28faa60,
title = "Numerical study of transient behaviour of molten zone during industrial FZ process for large silicon crystal growth",
abstract = "The fully transient axisymmetric model has been developed for calculation of phase boundaries in large (up to 200mm diameter) industrial floating zone (FZ) silicon single crystal growth with the needle-eye technique. The transient model is implemented in a specialized computer program. The model and program are based on a previously developed model and program for steady-state FZ process calculations. This transient approach allows studying of such substantially time-dependent process phases as the growth of the starting and ending cones of the crystal rod, which are particularly important for growth of large crystals in practice. Numerous calculations are carried out and the results for reducing crystal diameter during growth process are presented.",
keywords = "A1. Computer simulation, A1. Phase boundaries, A1. Transient modelling, A2. Floating zone technique",
author = "A. Rudevi{\v c}s and A. Mui{\v z}nieks and G. Ratnieks and A. M{\"u}hlbauer and Th Wetzel",
note = "Copyright: Copyright 2008 Elsevier B.V., All rights reserved.; Fourth International Workshop on Modeling ; Conference date: 04-11-2003 Through 07-11-2003",
year = "2004",
month = may,
day = "15",
doi = "10.1016/j.jcrysgro.2004.02.029",
language = "English",
volume = "266",
pages = "54--59",
journal = "Journal of crystal growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-3",

}

Download

TY - JOUR

T1 - Numerical study of transient behaviour of molten zone during industrial FZ process for large silicon crystal growth

AU - Rudevičs, A.

AU - Muižnieks, A.

AU - Ratnieks, G.

AU - Mühlbauer, A.

AU - Wetzel, Th

N1 - Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2004/5/15

Y1 - 2004/5/15

N2 - The fully transient axisymmetric model has been developed for calculation of phase boundaries in large (up to 200mm diameter) industrial floating zone (FZ) silicon single crystal growth with the needle-eye technique. The transient model is implemented in a specialized computer program. The model and program are based on a previously developed model and program for steady-state FZ process calculations. This transient approach allows studying of such substantially time-dependent process phases as the growth of the starting and ending cones of the crystal rod, which are particularly important for growth of large crystals in practice. Numerous calculations are carried out and the results for reducing crystal diameter during growth process are presented.

AB - The fully transient axisymmetric model has been developed for calculation of phase boundaries in large (up to 200mm diameter) industrial floating zone (FZ) silicon single crystal growth with the needle-eye technique. The transient model is implemented in a specialized computer program. The model and program are based on a previously developed model and program for steady-state FZ process calculations. This transient approach allows studying of such substantially time-dependent process phases as the growth of the starting and ending cones of the crystal rod, which are particularly important for growth of large crystals in practice. Numerous calculations are carried out and the results for reducing crystal diameter during growth process are presented.

KW - A1. Computer simulation

KW - A1. Phase boundaries

KW - A1. Transient modelling

KW - A2. Floating zone technique

UR - http://www.scopus.com/inward/record.url?scp=2342544891&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2004.02.029

DO - 10.1016/j.jcrysgro.2004.02.029

M3 - Conference article

AN - SCOPUS:2342544891

VL - 266

SP - 54

EP - 59

JO - Journal of crystal growth

JF - Journal of crystal growth

SN - 0022-0248

IS - 1-3

T2 - Fourth International Workshop on Modeling

Y2 - 4 November 2003 through 7 November 2003

ER -