Numerical study and comparisons with experimental data for transient behaviour of phase boundaries during industrial FZ process for silicon crystal growth

Research output: Contribution to journalConference articleResearchpeer review

Authors

  • A. Rudevics
  • A. Muiznieks
  • H. Riemann
  • A. Luedge
  • G. Ratnieks
  • W. Von Ammon

External Research Organisations

  • University of Latvia
  • Leibniz Institute for Crystal Growth (IKZ)
  • Siltronic AG
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Details

Original languageEnglish
Pages (from-to)e561-e565
JournalJournal of crystal growth
Volume275
Issue number1-2
Early online date18 Dec 2004
Publication statusPublished - 15 Feb 2005

Abstract

In our numerical transient model developed previously for the industrial FZ crystal growth process with the needle-eye technique, the meshing algorithms are essentially improved and a significant amount of numerical studies are carried out for model verification. Transient modelling for the experimental growth process with step-like time dependences of inductor current and feed rod velocity has shown that time dependencies of the crystal radius and zone height calculated numerically agree with the data from praxis. The fully transient simulation for growth process of crystal starting cone has shown that the model is capable of performing the simulation even if the crystal diameter changes very significantly. These results also testified that the new FEM and BEM mesh update algorithms described in the present paper are important to perform the correct and fast simulation of transient crystal growth processes.

Keywords

    A1. Computer simulation, A1. Phase boundaries, A1. Transient modelling, A2. Floating zone technique

ASJC Scopus subject areas

Cite this

Numerical study and comparisons with experimental data for transient behaviour of phase boundaries during industrial FZ process for silicon crystal growth. / Rudevics, A.; Muiznieks, A.; Riemann, H. et al.
In: Journal of crystal growth, Vol. 275, No. 1-2, 15.02.2005, p. e561-e565.

Research output: Contribution to journalConference articleResearchpeer review

Rudevics A, Muiznieks A, Riemann H, Luedge A, Ratnieks G, Von Ammon W. Numerical study and comparisons with experimental data for transient behaviour of phase boundaries during industrial FZ process for silicon crystal growth. Journal of crystal growth. 2005 Feb 15;275(1-2):e561-e565. Epub 2004 Dec 18. doi: 10.1016/j.jcrysgro.2004.11.068
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AU - Muiznieks, A.

AU - Riemann, H.

AU - Luedge, A.

AU - Ratnieks, G.

AU - Von Ammon, W.

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