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Numerical modelling of melt flow during Czochralski Silicon crystal growth

Research output: Chapter in book/report/conference proceedingConference contributionResearch

Authors

  • J. Virbulis
  • T. Wetzel
  • Andris Muiznieks
  • Georg Raming

Details

Original languageEnglish
Title of host publicationProceedings of the International Colloquium Modelling of Material Processing
Subtitle of host publicationRiga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover
Place of PublicationRiga
Pages42-47
Publication statusPublished - 1999
EventInternational Scientific Colloquium Modelling of Material Processing - Riga
Duration: 28 May 199929 May 1999

Cite this

Numerical modelling of melt flow during Czochralski Silicon crystal growth. / Virbulis, J.; Wetzel, T.; Muiznieks, Andris et al.
Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover . Riga, 1999. p. 42-47.

Research output: Chapter in book/report/conference proceedingConference contributionResearch

Virbulis, J, Wetzel, T, Muiznieks, A, Raming, G, Rexer, B, Dornberger, E, von Ammon, W & Mühlbauer, A 1999, Numerical modelling of melt flow during Czochralski Silicon crystal growth. in Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover . Riga, pp. 42-47, International Scientific Colloquium Modelling of Material Processing, Riga, 28 May 1999.
Virbulis, J., Wetzel, T., Muiznieks, A., Raming, G., Rexer, B., Dornberger, E., von Ammon, W., & Mühlbauer, A. (1999). Numerical modelling of melt flow during Czochralski Silicon crystal growth. In Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover (pp. 42-47).
Virbulis J, Wetzel T, Muiznieks A, Raming G, Rexer B, Dornberger E et al. Numerical modelling of melt flow during Czochralski Silicon crystal growth. In Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover . Riga. 1999. p. 42-47
Virbulis, J. ; Wetzel, T. ; Muiznieks, Andris et al. / Numerical modelling of melt flow during Czochralski Silicon crystal growth. Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover . Riga, 1999. pp. 42-47
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title = "Numerical modelling of melt flow during Czochralski Silicon crystal growth",
author = "J. Virbulis and T. Wetzel and Andris Muiznieks and Georg Raming and B. Rexer and E. Dornberger and {von Ammon}, W. and Alfred M{\"u}hlbauer",
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Download

TY - GEN

T1 - Numerical modelling of melt flow during Czochralski Silicon crystal growth

AU - Virbulis, J.

AU - Wetzel, T.

AU - Muiznieks, Andris

AU - Raming, Georg

AU - Rexer, B.

AU - Dornberger, E.

AU - von Ammon, W.

AU - Mühlbauer, Alfred

PY - 1999

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BT - Proceedings of the International Colloquium Modelling of Material Processing

CY - Riga

T2 - International Scientific Colloquium Modelling of Material Processing

Y2 - 28 May 1999 through 29 May 1999

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