Numerical Modeling of c-Si PV Modules by Coupling the Semiconductor with the Thermal Conduction, Convection and Radiation Equations

Research output: Contribution to journalConference articleResearchpeer review

Authors

  • Hendrik Holst
  • Rolf Brendel
  • Pietro P. Altermatt
  • Matthias Winter
  • Malte R. Vogt

Research Organisations

External Research Organisations

  • Institute for Solar Energy Research (ISFH)
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Details

Original languageEnglish
Pages (from-to)215-224
Number of pages10
JournalEnergy Procedia
Volume77
Early online date28 Aug 2015
Publication statusPublished - Aug 2015
Event5th International Conference on Silicon Photovoltaics, SiliconPV 2015 - Konstanz, Germany
Duration: 25 Mar 201527 Mar 2015

Abstract

Commonly, the thermal behavior of solar cell modules is calculated with analytical approaches using non wavelength-dependent optical data. Here, we employ ray tracing of entire solar modules at wavelengths of 300-2500 nm to calculate heat sources. Subsequently, finite element method (FEM) simulations are used to solve the semiconductor equations coupled with the thermal conduction, thermal convection, and thermal radiation equations. The implemented model is validated with measurements from an outdoor test over the period of an entire year. Our ray tracing analysis of different solar modules under the AM.15G spectrum shows that, for a standard module about 18.9% of the sun's intensity becomes parasitically absorbed. A loss analysis shows that the biggest parasitic heat source is the cell's full-area rear side metallization. We hence propose the use of a SiNx layer as rear side mirror to reduce the parasitic absorption to 11.7%. This change can lead to a 3.2 °C lower module operating temperature, which results in an about 5 W higher electrical power output when considering a typical 260 W module.

Keywords

    dielectric rear side mirror, Ray tracing, simlation, solar module temperature;field measurements, thermal solar module behaviour

ASJC Scopus subject areas

Cite this

Numerical Modeling of c-Si PV Modules by Coupling the Semiconductor with the Thermal Conduction, Convection and Radiation Equations. / Holst, Hendrik; Brendel, Rolf; Altermatt, Pietro P. et al.
In: Energy Procedia, Vol. 77, 08.2015, p. 215-224.

Research output: Contribution to journalConference articleResearchpeer review

Holst H, Brendel R, Altermatt PP, Winter M, Vogt MR. Numerical Modeling of c-Si PV Modules by Coupling the Semiconductor with the Thermal Conduction, Convection and Radiation Equations. Energy Procedia. 2015 Aug;77:215-224. Epub 2015 Aug 28. doi: 10.1016/j.egypro.2015.07.030, 10.15488/783
Holst, Hendrik ; Brendel, Rolf ; Altermatt, Pietro P. et al. / Numerical Modeling of c-Si PV Modules by Coupling the Semiconductor with the Thermal Conduction, Convection and Radiation Equations. In: Energy Procedia. 2015 ; Vol. 77. pp. 215-224.
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title = "Numerical Modeling of c-Si PV Modules by Coupling the Semiconductor with the Thermal Conduction, Convection and Radiation Equations",
abstract = "Commonly, the thermal behavior of solar cell modules is calculated with analytical approaches using non wavelength-dependent optical data. Here, we employ ray tracing of entire solar modules at wavelengths of 300-2500 nm to calculate heat sources. Subsequently, finite element method (FEM) simulations are used to solve the semiconductor equations coupled with the thermal conduction, thermal convection, and thermal radiation equations. The implemented model is validated with measurements from an outdoor test over the period of an entire year. Our ray tracing analysis of different solar modules under the AM.15G spectrum shows that, for a standard module about 18.9% of the sun's intensity becomes parasitically absorbed. A loss analysis shows that the biggest parasitic heat source is the cell's full-area rear side metallization. We hence propose the use of a SiNx layer as rear side mirror to reduce the parasitic absorption to 11.7%. This change can lead to a 3.2 °C lower module operating temperature, which results in an about 5 W higher electrical power output when considering a typical 260 W module.",
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T1 - Numerical Modeling of c-Si PV Modules by Coupling the Semiconductor with the Thermal Conduction, Convection and Radiation Equations

AU - Holst, Hendrik

AU - Brendel, Rolf

AU - Altermatt, Pietro P.

AU - Winter, Matthias

AU - Vogt, Malte R.

N1 - Publisher Copyright: © 2015 The Authors.

PY - 2015/8

Y1 - 2015/8

N2 - Commonly, the thermal behavior of solar cell modules is calculated with analytical approaches using non wavelength-dependent optical data. Here, we employ ray tracing of entire solar modules at wavelengths of 300-2500 nm to calculate heat sources. Subsequently, finite element method (FEM) simulations are used to solve the semiconductor equations coupled with the thermal conduction, thermal convection, and thermal radiation equations. The implemented model is validated with measurements from an outdoor test over the period of an entire year. Our ray tracing analysis of different solar modules under the AM.15G spectrum shows that, for a standard module about 18.9% of the sun's intensity becomes parasitically absorbed. A loss analysis shows that the biggest parasitic heat source is the cell's full-area rear side metallization. We hence propose the use of a SiNx layer as rear side mirror to reduce the parasitic absorption to 11.7%. This change can lead to a 3.2 °C lower module operating temperature, which results in an about 5 W higher electrical power output when considering a typical 260 W module.

AB - Commonly, the thermal behavior of solar cell modules is calculated with analytical approaches using non wavelength-dependent optical data. Here, we employ ray tracing of entire solar modules at wavelengths of 300-2500 nm to calculate heat sources. Subsequently, finite element method (FEM) simulations are used to solve the semiconductor equations coupled with the thermal conduction, thermal convection, and thermal radiation equations. The implemented model is validated with measurements from an outdoor test over the period of an entire year. Our ray tracing analysis of different solar modules under the AM.15G spectrum shows that, for a standard module about 18.9% of the sun's intensity becomes parasitically absorbed. A loss analysis shows that the biggest parasitic heat source is the cell's full-area rear side metallization. We hence propose the use of a SiNx layer as rear side mirror to reduce the parasitic absorption to 11.7%. This change can lead to a 3.2 °C lower module operating temperature, which results in an about 5 W higher electrical power output when considering a typical 260 W module.

KW - dielectric rear side mirror

KW - Ray tracing

KW - simlation

KW - solar module temperature;field measurements

KW - thermal solar module behaviour

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DO - 10.1016/j.egypro.2015.07.030

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JO - Energy Procedia

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