Details
Original language | English |
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Title of host publication | Modeling in crystal growth |
Subtitle of host publication | proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000 |
Place of Publication | Amsterdam |
Publisher | Elsevier |
Pages | 13-14 |
Publication status | Published - 2001 |
Event | 3rd International Workshop on Modeling in Crystal Growth - New York Duration: 18 Oct 2000 → 19 Oct 2000 Conference number: 3 |
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Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000. Amsterdam: Elsevier, 2001. p. 13-14.
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research
}
TY - GEN
T1 - Numerical model of turbulent CZ melt flow in the presence of AC and DC fields and its verification in a laboratory facility
AU - Wetzel, Thomas
AU - Baake, Egbert
AU - Mühlbauer, Alfred
AU - Gelfgat, Y.
AU - Gorbunov, L.
AU - Virbulis, J.
AU - Tomzig, E.
AU - von Ammon, W.
N1 - Conference code: 3
PY - 2001
Y1 - 2001
M3 - Conference contribution
SP - 13
EP - 14
BT - Modeling in crystal growth
PB - Elsevier
CY - Amsterdam
T2 - 3rd International Workshop on Modeling in Crystal Growth
Y2 - 18 October 2000 through 19 October 2000
ER -