Details
| Original language | English |
|---|---|
| Pages (from-to) | 81-91 |
| Number of pages | 11 |
| Journal | Journal of crystal growth |
| Volume | 230 |
| Issue number | 1-2 |
| Early online date | 10 Jul 2001 |
| Publication status | Published - Aug 2001 |
Abstract
The paper describes a numerical simulation tool for heat and mass transfer processes in large diameter CZ crucibles under the influence of several non-rotating AC and CUSP magnetic fields. Such fields are expected to provide an additional means to influence the melt behaviour, particularly in the industrial growth of large diameter silicon crystals. The simulation tool is based on axisymmetric 2D models for the AC and CUSP magnetic fields in the whole CZ facility and turbulent hydrodynamics, temperature and mass transport in the melt under the influence of the electromagnetic fields. The simulation tool is verified by comparisons to experimental results from a laboratory CZ setup with eutectics InGaSn model melt.
Keywords
- A1. Fluid flows, A1. Heat transfer, A1. Magnetic fields, A2. Czochralski method, B2. Semiconducting silicon
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Chemistry(all)
- Inorganic Chemistry
- Materials Science(all)
- Materials Chemistry
Sustainable Development Goals
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In: Journal of crystal growth, Vol. 230, No. 1-2, 08.2001, p. 81-91.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Numerical model of turbulent CZ melt flow in the presence of AC and CUSP magnetic fields and its verification in a laboratory facility
AU - Wetzel, Th
AU - Muiznieks, A.
AU - Mühlbauer, A.
AU - Gelfgat, Y.
AU - Gorbunov, L.
AU - Virbulis, J.
AU - Tomzig, E.
AU - Ammon, W. V.
N1 - Funding Information: This paper is written in the frame of the close co-operation between Wacker Siltronic AG, the Institute of Physics at the University of Latvia in Riga, where the experimental setup is designed and operated, and the Institute for Electroheat at the University of Hannover, Germany, where the numerical modeling system is developed, implemented, tested and used for studies of the industrial CZ growth of large diameter silicon crystals. The work is sponsored by the German Federal Ministry of Education, Science, Research and Technology under Contract Nr. 01 M 2973 A. The authors alone are responsible for the content of this publication. Copyright: Copyright 2007 Elsevier B.V., All rights reserved.
PY - 2001/8
Y1 - 2001/8
N2 - The paper describes a numerical simulation tool for heat and mass transfer processes in large diameter CZ crucibles under the influence of several non-rotating AC and CUSP magnetic fields. Such fields are expected to provide an additional means to influence the melt behaviour, particularly in the industrial growth of large diameter silicon crystals. The simulation tool is based on axisymmetric 2D models for the AC and CUSP magnetic fields in the whole CZ facility and turbulent hydrodynamics, temperature and mass transport in the melt under the influence of the electromagnetic fields. The simulation tool is verified by comparisons to experimental results from a laboratory CZ setup with eutectics InGaSn model melt.
AB - The paper describes a numerical simulation tool for heat and mass transfer processes in large diameter CZ crucibles under the influence of several non-rotating AC and CUSP magnetic fields. Such fields are expected to provide an additional means to influence the melt behaviour, particularly in the industrial growth of large diameter silicon crystals. The simulation tool is based on axisymmetric 2D models for the AC and CUSP magnetic fields in the whole CZ facility and turbulent hydrodynamics, temperature and mass transport in the melt under the influence of the electromagnetic fields. The simulation tool is verified by comparisons to experimental results from a laboratory CZ setup with eutectics InGaSn model melt.
KW - A1. Fluid flows
KW - A1. Heat transfer
KW - A1. Magnetic fields
KW - A2. Czochralski method
KW - B2. Semiconducting silicon
UR - http://www.scopus.com/inward/record.url?scp=0035426742&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(01)01316-1
DO - 10.1016/S0022-0248(01)01316-1
M3 - Conference article
AN - SCOPUS:0035426742
VL - 230
SP - 81
EP - 91
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
IS - 1-2
ER -