Details
| Original language | English |
|---|---|
| Title of host publication | Modeling in crystal growth |
| Subtitle of host publication | proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000 |
| Place of Publication | Amsterdam |
| Publisher | Elsevier |
| Pages | 35-36 |
| Publication status | Published - 2001 |
| Event | 3rd International Workshop on Modeling in Crystal Growth - New York Duration: 18 Oct 2000 → 19 Oct 2000 Conference number: 3 |
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Numerical investigation of the influence of EM-Fields on fluid motion and resistivity distribution during Floating-Zone (FZ) growth of large silicon single crystals. / Muiznieks, Andris; Raming, Georg; Mühlbauer, Alfred.
Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000. Amsterdam: Elsevier, 2001. p. 35-36.
Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000. Amsterdam: Elsevier, 2001. p. 35-36.
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research
Muiznieks, A, Raming, G & Mühlbauer, A 2001, Numerical investigation of the influence of EM-Fields on fluid motion and resistivity distribution during Floating-Zone (FZ) growth of large silicon single crystals. in Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000. Elsevier, Amsterdam, pp. 35-36, 3rd International Workshop on Modeling in Crystal Growth, New York, 18 Oct 2000.
Muiznieks, A., Raming, G., & Mühlbauer, A. (2001). Numerical investigation of the influence of EM-Fields on fluid motion and resistivity distribution during Floating-Zone (FZ) growth of large silicon single crystals. In Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000 (pp. 35-36). Elsevier.
Muiznieks A, Raming G, Mühlbauer A. Numerical investigation of the influence of EM-Fields on fluid motion and resistivity distribution during Floating-Zone (FZ) growth of large silicon single crystals. In Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000. Amsterdam: Elsevier. 2001. p. 35-36
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@inproceedings{cfca56dcefb44eda8f7b045d3d77e338,
title = "Numerical investigation of the influence of EM-Fields on fluid motion and resistivity distribution during Floating-Zone (FZ) growth of large silicon single crystals",
author = "Andris Muiznieks and Georg Raming and Alfred M{\"u}hlbauer",
year = "2001",
language = "English",
pages = "35--36",
booktitle = "Modeling in crystal growth",
publisher = "Elsevier",
address = "Netherlands",
note = "3rd International Workshop on Modeling in Crystal Growth ; Conference date: 18-10-2000 Through 19-10-2000",
}
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TY - GEN
T1 - Numerical investigation of the influence of EM-Fields on fluid motion and resistivity distribution during Floating-Zone (FZ) growth of large silicon single crystals
AU - Muiznieks, Andris
AU - Raming, Georg
AU - Mühlbauer, Alfred
N1 - Conference code: 3
PY - 2001
Y1 - 2001
M3 - Conference contribution
SP - 35
EP - 36
BT - Modeling in crystal growth
PB - Elsevier
CY - Amsterdam
T2 - 3rd International Workshop on Modeling in Crystal Growth
Y2 - 18 October 2000 through 19 October 2000
ER -