Details
| Original language | English |
|---|---|
| Title of host publication | Modeling in crystal growth |
| Subtitle of host publication | proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000 |
| Place of Publication | Amsterdam |
| Publisher | Elsevier |
| Pages | 31-32 |
| Publication status | Published - 2001 |
| Event | 3rd International Workshop on Modeling in Crystal Growth - New York Duration: 18 Oct 2000 → 19 Oct 2000 Conference number: 3 |
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Numerical investigation of Si melt flow in large diameter CZ crucibles under the influence of various AC and DC fields. / Virbulis, J.; Wetzel, Thomas; Muiznieks, Andris et al.
Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000. Amsterdam: Elsevier, 2001. p. 31-32.
Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000. Amsterdam: Elsevier, 2001. p. 31-32.
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research
Virbulis, J, Wetzel, T, Muiznieks, A, Mühlbauer, A, von Ammon, W, Dornberger, E, Tomzig, E & Hanna, B 2001, Numerical investigation of Si melt flow in large diameter CZ crucibles under the influence of various AC and DC fields. in Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000. Elsevier, Amsterdam, pp. 31-32, 3rd International Workshop on Modeling in Crystal Growth, New York, 18 Oct 2000.
Virbulis, J., Wetzel, T., Muiznieks, A., Mühlbauer, A., von Ammon, W., Dornberger, E., Tomzig, E., & Hanna, B. (2001). Numerical investigation of Si melt flow in large diameter CZ crucibles under the influence of various AC and DC fields. In Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000 (pp. 31-32). Elsevier.
Virbulis J, Wetzel T, Muiznieks A, Mühlbauer A, von Ammon W, Dornberger E et al. Numerical investigation of Si melt flow in large diameter CZ crucibles under the influence of various AC and DC fields. In Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000. Amsterdam: Elsevier. 2001. p. 31-32
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@inproceedings{bd0e0239017545c2805f16da43a478f6,
title = "Numerical investigation of Si melt flow in large diameter CZ crucibles under the influence of various AC and DC fields",
author = "J. Virbulis and Thomas Wetzel and Andris Muiznieks and Alfred M{\"u}hlbauer and {von Ammon}, W. and E. Dornberger and E. Tomzig and B. Hanna",
year = "2001",
language = "English",
pages = "31--32",
booktitle = "Modeling in crystal growth",
publisher = "Elsevier",
address = "Netherlands",
note = "3rd International Workshop on Modeling in Crystal Growth ; Conference date: 18-10-2000 Through 19-10-2000",
}
Download
TY - GEN
T1 - Numerical investigation of Si melt flow in large diameter CZ crucibles under the influence of various AC and DC fields
AU - Virbulis, J.
AU - Wetzel, Thomas
AU - Muiznieks, Andris
AU - Mühlbauer, Alfred
AU - von Ammon, W.
AU - Dornberger, E.
AU - Tomzig, E.
AU - Hanna, B.
N1 - Conference code: 3
PY - 2001
Y1 - 2001
M3 - Conference contribution
SP - 31
EP - 32
BT - Modeling in crystal growth
PB - Elsevier
CY - Amsterdam
T2 - 3rd International Workshop on Modeling in Crystal Growth
Y2 - 18 October 2000 through 19 October 2000
ER -