Details
| Original language | English |
|---|---|
| Pages (from-to) | 48-56 |
| Number of pages | 9 |
| Journal | Journal of crystal growth |
| Volume | 230 |
| Issue number | 1-2 |
| Early online date | 10 Jul 2001 |
| Publication status | Published - Aug 2001 |
Abstract
Three-dimensional modelling of the floating zone (needle-eye) crystal growth process is carried out to analyse numerically the stability of the melt flow and the influence of the crystal rotation rate and inductor slit width on the 3D flow field and on the grown crystal resistivity. The unsteadiness of the melt is simulated and it is found that for the considered growth parameters a steady-state flow can be a reasonable approximation to the unsteady melt motion. The parametric studies have shown that increasing the rotation rate essentially changes the flow pattern and weakens the rotational striations, while the inductor slit width has a more local influence on these characteristics.
Keywords
- A1. Computer simulation, A1. Fluid flows, A1. Mass transfer, A2. Floating zone technique, B2. Semiconducting silicon
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Chemistry(all)
- Inorganic Chemistry
- Materials Science(all)
- Materials Chemistry
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In: Journal of crystal growth, Vol. 230, No. 1-2, 08.2001, p. 48-56.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Numerical 3D study of FZ growth
T2 - Dependence on growth parameters and melt instability
AU - Ratnieks, G.
AU - Muižnieks, A.
AU - Mühlbauer, A.
AU - Raming, G.
N1 - Funding information: This paper presents results obtained within the frame of a cooperation project sponsored by VW foundation, Hanover, Germany. Cooperation partners of this project: Institute for Electroheat, University of Hanover, Germany and Department of Physics, University of Latvia, Latvia.
PY - 2001/8
Y1 - 2001/8
N2 - Three-dimensional modelling of the floating zone (needle-eye) crystal growth process is carried out to analyse numerically the stability of the melt flow and the influence of the crystal rotation rate and inductor slit width on the 3D flow field and on the grown crystal resistivity. The unsteadiness of the melt is simulated and it is found that for the considered growth parameters a steady-state flow can be a reasonable approximation to the unsteady melt motion. The parametric studies have shown that increasing the rotation rate essentially changes the flow pattern and weakens the rotational striations, while the inductor slit width has a more local influence on these characteristics.
AB - Three-dimensional modelling of the floating zone (needle-eye) crystal growth process is carried out to analyse numerically the stability of the melt flow and the influence of the crystal rotation rate and inductor slit width on the 3D flow field and on the grown crystal resistivity. The unsteadiness of the melt is simulated and it is found that for the considered growth parameters a steady-state flow can be a reasonable approximation to the unsteady melt motion. The parametric studies have shown that increasing the rotation rate essentially changes the flow pattern and weakens the rotational striations, while the inductor slit width has a more local influence on these characteristics.
KW - A1. Computer simulation
KW - A1. Fluid flows
KW - A1. Mass transfer
KW - A2. Floating zone technique
KW - B2. Semiconducting silicon
UR - http://www.scopus.com/inward/record.url?scp=0035426382&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(01)01318-5
DO - 10.1016/S0022-0248(01)01318-5
M3 - Conference article
AN - SCOPUS:0035426382
VL - 230
SP - 48
EP - 56
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
IS - 1-2
ER -