Details
| Original language | English |
|---|---|
| Pages (from-to) | 7-12 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium Proceedings |
| Volume | 928 |
| Issue number | 1 |
| Publication status | Published - 1 Sept 2006 |
| Event | 2006 MRS Spring Meeting - San Francisco, CA, United States Duration: 17 Apr 2006 → 21 Apr 2006 |
Abstract
Double-barrier insulator/Si/insulator nanostructures on Si(111) have been grown using molecular beam epitaxy. Ultrathin single-crystalline Si buried in a single-crystalline insulator matrix with sharp interfaces was obtained by a novel approach based on an epitaxial encapsulated solid-phase epitaxy. As an example, we demonstrate the growth of Si buried in Gd2O3 and the incorporation of epitaxial Si islands into single-crystalline Gd 2O3. The I-V characteristic of the obtained nanostructures exhibited negative differential resistance at low temperatures, however, with a strong memory effect.
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Mechanics of Materials
- Engineering(all)
- Mechanical Engineering
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In: Materials Research Society Symposium Proceedings, Vol. 928, No. 1, 01.09.2006, p. 7-12.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Novel Approach for Fabrication of Single-Crystalline Insulator/Si/Insulator Nanostructures
AU - Fissel, Andreas
AU - Kuehne, Dirk
AU - Bugiel, Eberhard
AU - Osten, H. Joerg
PY - 2006/9/1
Y1 - 2006/9/1
N2 - Double-barrier insulator/Si/insulator nanostructures on Si(111) have been grown using molecular beam epitaxy. Ultrathin single-crystalline Si buried in a single-crystalline insulator matrix with sharp interfaces was obtained by a novel approach based on an epitaxial encapsulated solid-phase epitaxy. As an example, we demonstrate the growth of Si buried in Gd2O3 and the incorporation of epitaxial Si islands into single-crystalline Gd 2O3. The I-V characteristic of the obtained nanostructures exhibited negative differential resistance at low temperatures, however, with a strong memory effect.
AB - Double-barrier insulator/Si/insulator nanostructures on Si(111) have been grown using molecular beam epitaxy. Ultrathin single-crystalline Si buried in a single-crystalline insulator matrix with sharp interfaces was obtained by a novel approach based on an epitaxial encapsulated solid-phase epitaxy. As an example, we demonstrate the growth of Si buried in Gd2O3 and the incorporation of epitaxial Si islands into single-crystalline Gd 2O3. The I-V characteristic of the obtained nanostructures exhibited negative differential resistance at low temperatures, however, with a strong memory effect.
UR - http://www.scopus.com/inward/record.url?scp=33947709280&partnerID=8YFLogxK
U2 - 10.1557/proc-0928-gg03-04
DO - 10.1557/proc-0928-gg03-04
M3 - Article
AN - SCOPUS:33947709280
VL - 928
SP - 7
EP - 12
JO - Materials Research Society Symposium Proceedings
JF - Materials Research Society Symposium Proceedings
SN - 0272-9172
IS - 1
T2 - 2006 MRS Spring Meeting
Y2 - 17 April 2006 through 21 April 2006
ER -