Details
| Original language | English |
|---|---|
| Pages (from-to) | 487-490 |
| Number of pages | 4 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 21 |
| Issue number | 2-4 |
| Publication status | Published - Mar 2004 |
| Event | Eleventh International Conference on Modulation (MSS11) - Nara, Japan Duration: 14 Jul 2003 → 18 Jul 2003 |
Abstract
We use magneto-transport spectroscopy to study a dramatic instability between a low and high conductivity mode in Si/SiGe-based resonant tunneling diodes with an embedded layer of self-assembled Ge hut cluster quantum dots in the Si barrier. In the low current regime a simple activation-type behavior with an astonishingly low activation energy in the order of 0.1 meV is determined. In the high current regime a region of negative differential conduction can be observed. We discuss the influence of different layer structures and magnetic fields.
Keywords
- Ge quantum dots, Hopping conduction, Hysteresis, Metal-insulator transition, MSS-11, Switching
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 21, No. 2-4, 03.2004, p. 487-490.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Nonlinear transport in p-type SiGe quantum well structure containing Ge quantum dots
AU - Haendel, K. M.
AU - Denker, U.
AU - Schmidt, O. G.
AU - Jansen, A. G.M.
AU - Haug, R. J.
PY - 2004/3
Y1 - 2004/3
N2 - We use magneto-transport spectroscopy to study a dramatic instability between a low and high conductivity mode in Si/SiGe-based resonant tunneling diodes with an embedded layer of self-assembled Ge hut cluster quantum dots in the Si barrier. In the low current regime a simple activation-type behavior with an astonishingly low activation energy in the order of 0.1 meV is determined. In the high current regime a region of negative differential conduction can be observed. We discuss the influence of different layer structures and magnetic fields.
AB - We use magneto-transport spectroscopy to study a dramatic instability between a low and high conductivity mode in Si/SiGe-based resonant tunneling diodes with an embedded layer of self-assembled Ge hut cluster quantum dots in the Si barrier. In the low current regime a simple activation-type behavior with an astonishingly low activation energy in the order of 0.1 meV is determined. In the high current regime a region of negative differential conduction can be observed. We discuss the influence of different layer structures and magnetic fields.
KW - Ge quantum dots
KW - Hopping conduction
KW - Hysteresis
KW - Metal-insulator transition
KW - MSS-11
KW - Switching
UR - http://www.scopus.com/inward/record.url?scp=1642416264&partnerID=8YFLogxK
U2 - 10.1016/j.physe.2003.11.048
DO - 10.1016/j.physe.2003.11.048
M3 - Conference article
AN - SCOPUS:1642416264
VL - 21
SP - 487
EP - 490
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 2-4
T2 - Eleventh International Conference on Modulation (MSS11)
Y2 - 14 July 2003 through 18 July 2003
ER -