NMR relaxation and line shape study on Li+ diffusion in nanocrystalline layer-structured LixTiS2

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Original languageEnglish
Pages (from-to)883-886
Number of pages4
JournalNanostructured Materials
Volume12
Issue number5
Publication statusPublished - 1999
Event1998 4th International Conference on Nanostructured Materials (NANO '98) - Stockholm, Swed
Duration: 14 Jun 199819 Jun 1998

Abstract

Temperature and frequency dependent 7Li spin-lattice relaxation rate measurements on the layer-structured two-dimensional ion conductor LixTiS2 in different order states were carried out in the laboratory frame and in the rotating frame. The activation energies for individual ion hopping, as obtained from these measurements, are about 0.19eV for the polycrystalline, 0.16eV for the nanocrystalline, and 0.07eV for the amorphous material. The frequency dependence of T1-1 is sublinear for both disordered modifications. The NMR central transition lines of the nanocrystalline material decompose into a narrow and a broad component in the course of motional narrowing. The relative intensity of the narrow component corresponding to the fraction of highly mobile Li ions increases gradually with temperature, reaching a limiting value of 50% at high temperatures. Hence, we conclude that the interfacial regions are not structurally homogeneous and comprise about half of the atoms of the sample. Contrary to three-dimensional nanocrystals, diffusion in the two-dimensional nanocrystalline material takes place on the grain surfaces rather than within an amorphous interface medium.

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NMR relaxation and line shape study on Li+ diffusion in nanocrystalline layer-structured LixTiS2. / Winter, Rudolf; Heitjans, Paul.
In: Nanostructured Materials, Vol. 12, No. 5, 1999, p. 883-886.

Research output: Contribution to journalConference articleResearchpeer review

Winter R, Heitjans P. NMR relaxation and line shape study on Li+ diffusion in nanocrystalline layer-structured LixTiS2. Nanostructured Materials. 1999;12(5):883-886. doi: 10.1016/S0965-9773(99)00258-5
Winter, Rudolf ; Heitjans, Paul. / NMR relaxation and line shape study on Li+ diffusion in nanocrystalline layer-structured LixTiS2. In: Nanostructured Materials. 1999 ; Vol. 12, No. 5. pp. 883-886.
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title = "NMR relaxation and line shape study on Li+ diffusion in nanocrystalline layer-structured LixTiS2",
abstract = "Temperature and frequency dependent 7Li spin-lattice relaxation rate measurements on the layer-structured two-dimensional ion conductor LixTiS2 in different order states were carried out in the laboratory frame and in the rotating frame. The activation energies for individual ion hopping, as obtained from these measurements, are about 0.19eV for the polycrystalline, 0.16eV for the nanocrystalline, and 0.07eV for the amorphous material. The frequency dependence of T1-1 is sublinear for both disordered modifications. The NMR central transition lines of the nanocrystalline material decompose into a narrow and a broad component in the course of motional narrowing. The relative intensity of the narrow component corresponding to the fraction of highly mobile Li ions increases gradually with temperature, reaching a limiting value of 50% at high temperatures. Hence, we conclude that the interfacial regions are not structurally homogeneous and comprise about half of the atoms of the sample. Contrary to three-dimensional nanocrystals, diffusion in the two-dimensional nanocrystalline material takes place on the grain surfaces rather than within an amorphous interface medium.",
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TY - JOUR

T1 - NMR relaxation and line shape study on Li+ diffusion in nanocrystalline layer-structured LixTiS2

AU - Winter, Rudolf

AU - Heitjans, Paul

PY - 1999

Y1 - 1999

N2 - Temperature and frequency dependent 7Li spin-lattice relaxation rate measurements on the layer-structured two-dimensional ion conductor LixTiS2 in different order states were carried out in the laboratory frame and in the rotating frame. The activation energies for individual ion hopping, as obtained from these measurements, are about 0.19eV for the polycrystalline, 0.16eV for the nanocrystalline, and 0.07eV for the amorphous material. The frequency dependence of T1-1 is sublinear for both disordered modifications. The NMR central transition lines of the nanocrystalline material decompose into a narrow and a broad component in the course of motional narrowing. The relative intensity of the narrow component corresponding to the fraction of highly mobile Li ions increases gradually with temperature, reaching a limiting value of 50% at high temperatures. Hence, we conclude that the interfacial regions are not structurally homogeneous and comprise about half of the atoms of the sample. Contrary to three-dimensional nanocrystals, diffusion in the two-dimensional nanocrystalline material takes place on the grain surfaces rather than within an amorphous interface medium.

AB - Temperature and frequency dependent 7Li spin-lattice relaxation rate measurements on the layer-structured two-dimensional ion conductor LixTiS2 in different order states were carried out in the laboratory frame and in the rotating frame. The activation energies for individual ion hopping, as obtained from these measurements, are about 0.19eV for the polycrystalline, 0.16eV for the nanocrystalline, and 0.07eV for the amorphous material. The frequency dependence of T1-1 is sublinear for both disordered modifications. The NMR central transition lines of the nanocrystalline material decompose into a narrow and a broad component in the course of motional narrowing. The relative intensity of the narrow component corresponding to the fraction of highly mobile Li ions increases gradually with temperature, reaching a limiting value of 50% at high temperatures. Hence, we conclude that the interfacial regions are not structurally homogeneous and comprise about half of the atoms of the sample. Contrary to three-dimensional nanocrystals, diffusion in the two-dimensional nanocrystalline material takes place on the grain surfaces rather than within an amorphous interface medium.

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JO - Nanostructured Materials

JF - Nanostructured Materials

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T2 - 1998 4th International Conference on Nanostructured Materials (NANO '98)

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ER -

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