Details
| Original language | English |
|---|---|
| Title of host publication | Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries |
| Place of Publication | Bellingham |
| Publisher | SPIE |
| Pages | 124-130 |
| Number of pages | 7 |
| Edition | 1 |
| ISBN (print) | 0-8194-3744-1 |
| Publication status | Published - 2 Nov 2000 |
| Externally published | Yes |
Publication series
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Publisher | SPIE |
| Volume | 4099 |
| ISSN (Print) | 0277-786X |
Abstract
The optical characterization of materials in thin film phase is a standard task in the field of coating technology. One typical problem is the optical characterization of a single layer of material deposited on a well-known substrate. Provided the physical model considered for the modeling is correct and the available experimental data (usually spectrophotometric or ellipsometric spectra) are accurate, a precise optical characterization is quite straightforward. However. there are experimental circumstances where several samples have been coated under very well defined conditions, as when they have been obtained in the same coating run, so that no differences are expected due to the positions of each individual sample inside the chamber during the deposition process. The aim of this work is to present an improved procedure for the optical characterization of the material deposited under the very well controlled conditions explained above. The basis of our method is to use the `a priori' information about the identical nature of all the samples, introducing all the spectrophotometric and/or ellipsometric data available from measurements into a global optimization procedure. This leads to a unique determination of the parameters that define the optical properties of the layers, as compared with the separate (individual) characterization of the samples. We will illustrate our procedures for MgF2 films in the range 200-800 nm.
Keywords
- Ellipsometry, Optical characterization, Spectrophotometry, Thin films
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Computer Science(all)
- Computer Science Applications
- Mathematics(all)
- Applied Mathematics
- Engineering(all)
- Electrical and Electronic Engineering
Cite this
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- Apa
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- BibTeX
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Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries. 1. ed. Bellingham: SPIE, 2000. p. 124-130 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 4099).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - New procedure for the optical characterization of high-quality thin films
AU - Bosch, Salvador
AU - Leinfellner, Norbert
AU - Quesnel, Etienne
AU - Duparré, Angela
AU - Ferré-Borrull, Josep
AU - Günster, Stefan
AU - Ristau, Detlev
PY - 2000/11/2
Y1 - 2000/11/2
N2 - The optical characterization of materials in thin film phase is a standard task in the field of coating technology. One typical problem is the optical characterization of a single layer of material deposited on a well-known substrate. Provided the physical model considered for the modeling is correct and the available experimental data (usually spectrophotometric or ellipsometric spectra) are accurate, a precise optical characterization is quite straightforward. However. there are experimental circumstances where several samples have been coated under very well defined conditions, as when they have been obtained in the same coating run, so that no differences are expected due to the positions of each individual sample inside the chamber during the deposition process. The aim of this work is to present an improved procedure for the optical characterization of the material deposited under the very well controlled conditions explained above. The basis of our method is to use the `a priori' information about the identical nature of all the samples, introducing all the spectrophotometric and/or ellipsometric data available from measurements into a global optimization procedure. This leads to a unique determination of the parameters that define the optical properties of the layers, as compared with the separate (individual) characterization of the samples. We will illustrate our procedures for MgF2 films in the range 200-800 nm.
AB - The optical characterization of materials in thin film phase is a standard task in the field of coating technology. One typical problem is the optical characterization of a single layer of material deposited on a well-known substrate. Provided the physical model considered for the modeling is correct and the available experimental data (usually spectrophotometric or ellipsometric spectra) are accurate, a precise optical characterization is quite straightforward. However. there are experimental circumstances where several samples have been coated under very well defined conditions, as when they have been obtained in the same coating run, so that no differences are expected due to the positions of each individual sample inside the chamber during the deposition process. The aim of this work is to present an improved procedure for the optical characterization of the material deposited under the very well controlled conditions explained above. The basis of our method is to use the `a priori' information about the identical nature of all the samples, introducing all the spectrophotometric and/or ellipsometric data available from measurements into a global optimization procedure. This leads to a unique determination of the parameters that define the optical properties of the layers, as compared with the separate (individual) characterization of the samples. We will illustrate our procedures for MgF2 films in the range 200-800 nm.
KW - Ellipsometry
KW - Optical characterization
KW - Spectrophotometry
KW - Thin films
UR - http://www.scopus.com/inward/record.url?scp=0034538652&partnerID=8YFLogxK
U2 - 10.1117/12.405812
DO - 10.1117/12.405812
M3 - Conference contribution
AN - SCOPUS:0034538652
SN - 0-8194-3744-1
T3 - Proceedings of SPIE - The International Society for Optical Engineering
SP - 124
EP - 130
BT - Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries
PB - SPIE
CY - Bellingham
ER -