Details
| Original language | English |
|---|---|
| Title of host publication | Physics of Semiconductors |
| Subtitle of host publication | Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012 |
| Pages | 175-176 |
| Number of pages | 2 |
| Publication status | Published - 31 Dec 2013 |
| Event | 31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich, Switzerland Duration: 29 Jul 2012 → 3 Aug 2012 |
Publication series
| Name | AIP Conference Proceedings |
|---|---|
| Volume | 1566 |
| ISSN (Print) | 0094-243X |
| ISSN (electronic) | 1551-7616 |
Abstract
An Atomic Force Microscope is used to alter one part of a single layer graphene sample locally. Transport experiments at low temperatures are then used to characterize the different parts independently with field effect and Hall measurements. It is shown, that the nanomachining leads to an effective doping in the altered area and therefore to a difference in the charge carrier density of Δn = 3.5·1015m-2 between the unchanged and changed part. These two parts can be tuned with a global backgate to form a junction of different polarity, i.e. a p-n junction.
Keywords
- AFM, bipolar, Graphene
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
Cite this
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Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. 2013. p. 175-176 (AIP Conference Proceedings; Vol. 1566).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Multi-terminal magnetotransport measurements over a tunable graphene p-n junction created by AFM-nanomachining
AU - Schmidt, H.
AU - Smirnov, D.
AU - Rode, J.
AU - Haug, R. J.
PY - 2013/12/31
Y1 - 2013/12/31
N2 - An Atomic Force Microscope is used to alter one part of a single layer graphene sample locally. Transport experiments at low temperatures are then used to characterize the different parts independently with field effect and Hall measurements. It is shown, that the nanomachining leads to an effective doping in the altered area and therefore to a difference in the charge carrier density of Δn = 3.5·1015m-2 between the unchanged and changed part. These two parts can be tuned with a global backgate to form a junction of different polarity, i.e. a p-n junction.
AB - An Atomic Force Microscope is used to alter one part of a single layer graphene sample locally. Transport experiments at low temperatures are then used to characterize the different parts independently with field effect and Hall measurements. It is shown, that the nanomachining leads to an effective doping in the altered area and therefore to a difference in the charge carrier density of Δn = 3.5·1015m-2 between the unchanged and changed part. These two parts can be tuned with a global backgate to form a junction of different polarity, i.e. a p-n junction.
KW - AFM
KW - bipolar
KW - Graphene
UR - http://www.scopus.com/inward/record.url?scp=84907337231&partnerID=8YFLogxK
U2 - 10.1063/1.4848342
DO - 10.1063/1.4848342
M3 - Conference contribution
AN - SCOPUS:84907337231
SN - 9780735411944
T3 - AIP Conference Proceedings
SP - 175
EP - 176
BT - Physics of Semiconductors
T2 - 31st International Conference on the Physics of Semiconductors, ICPS 2012
Y2 - 29 July 2012 through 3 August 2012
ER -