Details
| Original language | English |
|---|---|
| Pages (from-to) | 933-941 |
| Number of pages | 9 |
| Journal | Energy Procedia |
| Volume | 38 |
| Early online date | 5 Sept 2013 |
| Publication status | Published - 2013 |
| Event | 3rd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2013 - Hamelin, Germany Duration: 25 Mar 2013 → 27 Mar 2013 |
Abstract
Kerf-free techniques for subdividing a single thick crystalline Si wafer into a multitude of thin Si layers have a large potential for cost reductions. In this paper, we explore pore formation in Si for separating many 18 μm-thick surface-textured layers from a thick wafer with a single etching process. We demonstrate the fabrication and separation of four macroporous Si layers in a single etching step. Generating many instead of single macroporous layers per etching step improves the economics of the macroporous Si process. We present our etching process that maintains the pore pattern defined by photolithography even after etching many absorber and separation layers.
Keywords
- Kerf-free, Layer transfer, Macroporous silicon, Thin films
ASJC Scopus subject areas
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In: Energy Procedia, Vol. 38, 2013, p. 933-941.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Multilayer Etching for Kerf-free Solar Cells from Macroporous Silicon
AU - Schäfer, Sören
AU - Ernst, Marco
AU - Kajari-Schröder, Sarah
AU - Brendel, Rolf
PY - 2013
Y1 - 2013
N2 - Kerf-free techniques for subdividing a single thick crystalline Si wafer into a multitude of thin Si layers have a large potential for cost reductions. In this paper, we explore pore formation in Si for separating many 18 μm-thick surface-textured layers from a thick wafer with a single etching process. We demonstrate the fabrication and separation of four macroporous Si layers in a single etching step. Generating many instead of single macroporous layers per etching step improves the economics of the macroporous Si process. We present our etching process that maintains the pore pattern defined by photolithography even after etching many absorber and separation layers.
AB - Kerf-free techniques for subdividing a single thick crystalline Si wafer into a multitude of thin Si layers have a large potential for cost reductions. In this paper, we explore pore formation in Si for separating many 18 μm-thick surface-textured layers from a thick wafer with a single etching process. We demonstrate the fabrication and separation of four macroporous Si layers in a single etching step. Generating many instead of single macroporous layers per etching step improves the economics of the macroporous Si process. We present our etching process that maintains the pore pattern defined by photolithography even after etching many absorber and separation layers.
KW - Kerf-free
KW - Layer transfer
KW - Macroporous silicon
KW - Thin films
UR - http://www.scopus.com/inward/record.url?scp=84898731275&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2013.07.367
DO - 10.1016/j.egypro.2013.07.367
M3 - Conference article
AN - SCOPUS:84898731275
VL - 38
SP - 933
EP - 941
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
T2 - 3rd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2013
Y2 - 25 March 2013 through 27 March 2013
ER -