Details
| Original language | English |
|---|---|
| Article number | 2101066 |
| Number of pages | 9 |
| Journal | Solar RRL |
| Volume | 6 |
| Issue number | 4 |
| Early online date | 17 Feb 2022 |
| Publication status | Published - 7 Apr 2022 |
Abstract
Combining a perovskite top cell with a conventional passivated emitter and rear cell (PERC) silicon bottom cell in a monolithically integrated tandem device is an economically attractive solution to boost the power conversion efficiency (PCE) of silicon single-junction technology. Proof-of-concept perovskite/silicon tandem solar cells using high-temperature stable bottom cells featuring a polycrystalline silicon on oxide (POLO) front junction and a PERC-type passivated rear side with local aluminum-p+ contacts are reported. For this PERC/POLO cell, a process flow that is compatible with industrial, mainstream PERC technology is implemented. Top and bottom cells are connected via a tin-doped indium oxide recombination layer. The recombination layer formation on the POLO front junction of the bottom cell is optimized by postdeposition annealing and mitigation of sputter damage. The perovskite top cell is monolithically integrated in a p−i−n junction device architecture. Proof-of-concept tandem cells demonstrate a PCE of up to 21.3%. Based on the experimental findings and supporting optical simulations, major performance enhancements by process and layer optimization are identified and a PCE potential of 29.5% for these perovskite/silicon tandem solar cells with PERC-like bottom cell technology is estimated.
Keywords
- monolithic tandem solar cells, perovskite tandems, perovskite/silicon tandems, polycrystalline silicon on oxide/passivated emitter and rear cell tandems, recombination junctions
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Energy(all)
- Energy Engineering and Power Technology
- Engineering(all)
- Electrical and Electronic Engineering
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In: Solar RRL, Vol. 6, No. 4, 2101066, 07.04.2022.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Monolithic Perovskite/Silicon Tandem Solar Cells Fabricated Using Industrial p-Type Polycrystalline Silicon on Oxide/Passivated Emitter and Rear Cell Silicon Bottom Cell Technology
AU - Mariotti, Silvia
AU - Jäger, Klaus
AU - Diederich, Marvin
AU - Härtel, Marlene S.
AU - Li, Bor
AU - Sveinbjörnsson, Kári
AU - Kajari-Schröder, Sarah
AU - Peibst, Robby
AU - Albrecht, Steve
AU - Korte, Lars
AU - Wietler, Tobias
N1 - Funding Information: This work was supported in part by the German Federal Ministry for Economic Affairs and Energy, under grant 03EE1017A&B (Project P3T), and in part by the Federal State of Lower Saxony. Additional funding was provided by the Helmholtz Association through the HySPRINT innovation lab project as well as by the Federal Ministry of Education and Research (BMBF) for funding of the Young Investigator Group Perovskite Tandem Solar Cells within the program “Materialforschung für die Energiewende” (grant no. 03SF0540). The optical simulations were performed at the Berlin Joint Lab for Optical Simulations for Energy Research (BerOSE) and the Helmholtz Excellence Cluster SOLARMATH of Helmholtz-Zentrum Berlin für Materialien und Energie, Zuse Institute Berlin and Freie Universität Berlin. The authors would like to thank H. Kohlenberg, G. Glowatzki, M. Turcu, and N. Mielich for bottom cell processing and R. Zieseniss for support with the confocal microscopy measurements at the Laboratory of Nano and Quantum Engineering, Leibniz University Hannover. The authors also thank Alvaro Tejada from HZB and Pontificia Universidad Católica del Perú for providing optical data. Open access funding enabled and organized by Projekt DEAL.
PY - 2022/4/7
Y1 - 2022/4/7
N2 - Combining a perovskite top cell with a conventional passivated emitter and rear cell (PERC) silicon bottom cell in a monolithically integrated tandem device is an economically attractive solution to boost the power conversion efficiency (PCE) of silicon single-junction technology. Proof-of-concept perovskite/silicon tandem solar cells using high-temperature stable bottom cells featuring a polycrystalline silicon on oxide (POLO) front junction and a PERC-type passivated rear side with local aluminum-p+ contacts are reported. For this PERC/POLO cell, a process flow that is compatible with industrial, mainstream PERC technology is implemented. Top and bottom cells are connected via a tin-doped indium oxide recombination layer. The recombination layer formation on the POLO front junction of the bottom cell is optimized by postdeposition annealing and mitigation of sputter damage. The perovskite top cell is monolithically integrated in a p−i−n junction device architecture. Proof-of-concept tandem cells demonstrate a PCE of up to 21.3%. Based on the experimental findings and supporting optical simulations, major performance enhancements by process and layer optimization are identified and a PCE potential of 29.5% for these perovskite/silicon tandem solar cells with PERC-like bottom cell technology is estimated.
AB - Combining a perovskite top cell with a conventional passivated emitter and rear cell (PERC) silicon bottom cell in a monolithically integrated tandem device is an economically attractive solution to boost the power conversion efficiency (PCE) of silicon single-junction technology. Proof-of-concept perovskite/silicon tandem solar cells using high-temperature stable bottom cells featuring a polycrystalline silicon on oxide (POLO) front junction and a PERC-type passivated rear side with local aluminum-p+ contacts are reported. For this PERC/POLO cell, a process flow that is compatible with industrial, mainstream PERC technology is implemented. Top and bottom cells are connected via a tin-doped indium oxide recombination layer. The recombination layer formation on the POLO front junction of the bottom cell is optimized by postdeposition annealing and mitigation of sputter damage. The perovskite top cell is monolithically integrated in a p−i−n junction device architecture. Proof-of-concept tandem cells demonstrate a PCE of up to 21.3%. Based on the experimental findings and supporting optical simulations, major performance enhancements by process and layer optimization are identified and a PCE potential of 29.5% for these perovskite/silicon tandem solar cells with PERC-like bottom cell technology is estimated.
KW - monolithic tandem solar cells
KW - perovskite tandems
KW - perovskite/silicon tandems
KW - polycrystalline silicon on oxide/passivated emitter and rear cell tandems
KW - recombination junctions
UR - http://www.scopus.com/inward/record.url?scp=85124749456&partnerID=8YFLogxK
U2 - 10.1002/solr.202101066
DO - 10.1002/solr.202101066
M3 - Article
AN - SCOPUS:85124749456
VL - 6
JO - Solar RRL
JF - Solar RRL
IS - 4
M1 - 2101066
ER -