Details
| Original language | English |
|---|---|
| Title of host publication | Rare Earth Oxide Thin Films |
| Subtitle of host publication | Growth, Characterization, and Applications |
| Editors | Marco Fanciulli, Giovanna Scarel |
| Pages | 101-114 |
| Number of pages | 14 |
| Publication status | Published - 28 Oct 2006 |
Publication series
| Name | Topics in Applied Physics |
|---|---|
| Volume | 106 |
| ISSN (Print) | 0303-4216 |
| ISSN (electronic) | 1437-0859 |
Abstract
We present results for crystalline lanthanide oxides on silicon with the Ln2O3 composition (Ln = Pr, Nd and Gd) in the cubic bixbyite structure grown by solid state molecular beam epitaxy (MBE). On Si(001)-oriented surfaces, crystalline Ln2O3 grows as (110)-oriented domains, with two orthogonal in-plane orientations. We obtain perfect epitaxial growth of cubic Nd2O3 on Si(111) substrates. These layers can be overgrown epitaxially with silicon. The successfully demonstrated heteroepitaxy of such Si/Ln2O 3/Si(111) stacks opens the door to a wide range of novel tunneling devices. For all investigated lanthanide oxides grown under ultra-high vacuum conditions, we observed the formation of crystalline interfacial silicide inclusions. MBE in combination with real-time reflection high-energy electron diffraction and in vacuo X-ray photoelectron spectroscopy were used to gain a detailed understanding of the interface and film formation during epitaxial growth of Nd2O3 on silicon. Based on that understanding, the whole growth procedure had to be adapted accordingly. In particular, the partial oxygen pressure during the interface formation and during growth is a very critical parameter. Layers grown by an appropriately by modified MBE process display no silicide inclusions, and also no interfacial silicon oxide layers.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
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Rare Earth Oxide Thin Films: Growth, Characterization, and Applications. ed. / Marco Fanciulli; Giovanna Scarel. 2006. p. 101-114 (Topics in Applied Physics; Vol. 106).
Research output: Chapter in book/report/conference proceeding › Contribution to book/anthology › Research › peer review
}
TY - CHAP
T1 - Molecular Beam Epitaxy of Rare-Earth Oxides
AU - Osten, H. Jörg
AU - Bugiel, Eberhard
AU - Czernohorsky, Malte
AU - Elassar, Zeyard
AU - Kirfel, Olaf
AU - Fissel, Andreas
N1 - Acknowledgements: This work was partly founded by the German Federal Ministry of Education and Research (BMBF) under the KrisMOS project (01M3142D)
PY - 2006/10/28
Y1 - 2006/10/28
N2 - We present results for crystalline lanthanide oxides on silicon with the Ln2O3 composition (Ln = Pr, Nd and Gd) in the cubic bixbyite structure grown by solid state molecular beam epitaxy (MBE). On Si(001)-oriented surfaces, crystalline Ln2O3 grows as (110)-oriented domains, with two orthogonal in-plane orientations. We obtain perfect epitaxial growth of cubic Nd2O3 on Si(111) substrates. These layers can be overgrown epitaxially with silicon. The successfully demonstrated heteroepitaxy of such Si/Ln2O 3/Si(111) stacks opens the door to a wide range of novel tunneling devices. For all investigated lanthanide oxides grown under ultra-high vacuum conditions, we observed the formation of crystalline interfacial silicide inclusions. MBE in combination with real-time reflection high-energy electron diffraction and in vacuo X-ray photoelectron spectroscopy were used to gain a detailed understanding of the interface and film formation during epitaxial growth of Nd2O3 on silicon. Based on that understanding, the whole growth procedure had to be adapted accordingly. In particular, the partial oxygen pressure during the interface formation and during growth is a very critical parameter. Layers grown by an appropriately by modified MBE process display no silicide inclusions, and also no interfacial silicon oxide layers.
AB - We present results for crystalline lanthanide oxides on silicon with the Ln2O3 composition (Ln = Pr, Nd and Gd) in the cubic bixbyite structure grown by solid state molecular beam epitaxy (MBE). On Si(001)-oriented surfaces, crystalline Ln2O3 grows as (110)-oriented domains, with two orthogonal in-plane orientations. We obtain perfect epitaxial growth of cubic Nd2O3 on Si(111) substrates. These layers can be overgrown epitaxially with silicon. The successfully demonstrated heteroepitaxy of such Si/Ln2O 3/Si(111) stacks opens the door to a wide range of novel tunneling devices. For all investigated lanthanide oxides grown under ultra-high vacuum conditions, we observed the formation of crystalline interfacial silicide inclusions. MBE in combination with real-time reflection high-energy electron diffraction and in vacuo X-ray photoelectron spectroscopy were used to gain a detailed understanding of the interface and film formation during epitaxial growth of Nd2O3 on silicon. Based on that understanding, the whole growth procedure had to be adapted accordingly. In particular, the partial oxygen pressure during the interface formation and during growth is a very critical parameter. Layers grown by an appropriately by modified MBE process display no silicide inclusions, and also no interfacial silicon oxide layers.
UR - http://www.scopus.com/inward/record.url?scp=33750828709&partnerID=8YFLogxK
U2 - 10.1007/11499893_7
DO - 10.1007/11499893_7
M3 - Contribution to book/anthology
AN - SCOPUS:33750828709
SN - 3540357963
SN - 9783540357964
T3 - Topics in Applied Physics
SP - 101
EP - 114
BT - Rare Earth Oxide Thin Films
A2 - Fanciulli, Marco
A2 - Scarel, Giovanna
ER -