Details
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08 |
| Pages | 148-151 |
| Number of pages | 4 |
| Publication status | Published - 2008 |
| Event | 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08 - Sydney, NSW, Australia Duration: 28 Jul 2008 → 1 Aug 2008 |
Publication series
| Name | Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD |
|---|
Abstract
Epitaxial growth of silicon on heavily boron-doped Si(111) surface was investigated. In our experiments, we found a new growth mode in the very initial stage for boron-coverage below 0.5 monolayer (ML) likely associated with defect-induced nucleation of Si islands. The initially stage of growth on boron covered Si(111) could be interpreted by a quasi van der Waals like epitaxy, where Si adatoms catch sites on the surface with only slightly deeper depression in the flat surface potential without significant bonding to the neighboring atoms. Deposition of Si at temperature below 800 K results in a layer-by-layer growth via nucleation and coalescence of two-bilayer Si islands on top of the initially formed van der Waals like buffer Si buffer layer, before the transition in the normal double layer growth mode occurred. The grown Si layers were found in twin position with respect to the underlying Si(111) substrate, resulting in a stacking fault in the substrate/layer interface. Structures with twin boundaries arranged periodically along the [111]-direction and separated by only a few Si double layers were obtained by repetition of a multi-step procedure several times. In such a way we obtained structures with regions of a twin repeat sequence ranging from 12 Si bilayers, corresponding to a twinning-superlattice, down to 4 bilayers, what is equivalent to a hexagonal 8H-Si polytype.
Keywords
- Boron, Growth mode, Molecular beam epitaxy, Polytypes, Silicon, Superlattice
ASJC Scopus subject areas
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
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Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08. 2008. p. 148-151 4802113 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Molecular beam epitaxial growth of Si on heavily boron-doped Si(111) surface
T2 - 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08
AU - Fissel, Andreas
AU - Krügener, Jan
AU - Bugiel, Eberhard
AU - Block, Tammo
AU - Osten, Hans Jörg
PY - 2008
Y1 - 2008
N2 - Epitaxial growth of silicon on heavily boron-doped Si(111) surface was investigated. In our experiments, we found a new growth mode in the very initial stage for boron-coverage below 0.5 monolayer (ML) likely associated with defect-induced nucleation of Si islands. The initially stage of growth on boron covered Si(111) could be interpreted by a quasi van der Waals like epitaxy, where Si adatoms catch sites on the surface with only slightly deeper depression in the flat surface potential without significant bonding to the neighboring atoms. Deposition of Si at temperature below 800 K results in a layer-by-layer growth via nucleation and coalescence of two-bilayer Si islands on top of the initially formed van der Waals like buffer Si buffer layer, before the transition in the normal double layer growth mode occurred. The grown Si layers were found in twin position with respect to the underlying Si(111) substrate, resulting in a stacking fault in the substrate/layer interface. Structures with twin boundaries arranged periodically along the [111]-direction and separated by only a few Si double layers were obtained by repetition of a multi-step procedure several times. In such a way we obtained structures with regions of a twin repeat sequence ranging from 12 Si bilayers, corresponding to a twinning-superlattice, down to 4 bilayers, what is equivalent to a hexagonal 8H-Si polytype.
AB - Epitaxial growth of silicon on heavily boron-doped Si(111) surface was investigated. In our experiments, we found a new growth mode in the very initial stage for boron-coverage below 0.5 monolayer (ML) likely associated with defect-induced nucleation of Si islands. The initially stage of growth on boron covered Si(111) could be interpreted by a quasi van der Waals like epitaxy, where Si adatoms catch sites on the surface with only slightly deeper depression in the flat surface potential without significant bonding to the neighboring atoms. Deposition of Si at temperature below 800 K results in a layer-by-layer growth via nucleation and coalescence of two-bilayer Si islands on top of the initially formed van der Waals like buffer Si buffer layer, before the transition in the normal double layer growth mode occurred. The grown Si layers were found in twin position with respect to the underlying Si(111) substrate, resulting in a stacking fault in the substrate/layer interface. Structures with twin boundaries arranged periodically along the [111]-direction and separated by only a few Si double layers were obtained by repetition of a multi-step procedure several times. In such a way we obtained structures with regions of a twin repeat sequence ranging from 12 Si bilayers, corresponding to a twinning-superlattice, down to 4 bilayers, what is equivalent to a hexagonal 8H-Si polytype.
KW - Boron
KW - Growth mode
KW - Molecular beam epitaxy
KW - Polytypes
KW - Silicon
KW - Superlattice
UR - http://www.scopus.com/inward/record.url?scp=64849098487&partnerID=8YFLogxK
U2 - 10.1109/COMMAD.2008.4802113
DO - 10.1109/COMMAD.2008.4802113
M3 - Conference contribution
AN - SCOPUS:64849098487
SN - 9781424427178
T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
SP - 148
EP - 151
BT - Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08
Y2 - 28 July 2008 through 1 August 2008
ER -