Details
| Original language | English |
|---|---|
| Title of host publication | SiliconPV 2021 - 11th International Conference on Crystalline Silicon Photovoltaics |
| Editors | Rolf Brendel, Christophe Ballif, Sebastien Dubois, Stefan Glunz, Giso Hahn, Jef Poortmans, Pierre Verlinden, Arthur Weeber |
| ISBN (electronic) | 9780735443624 |
| Publication status | Published - 24 Aug 2022 |
| Event | 11th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2021 - Hamelin, Virtual, Germany Duration: 19 Apr 2021 → 23 Apr 2021 |
Publication series
| Name | AIP Conference Proceedings |
|---|---|
| Volume | 2487 |
| ISSN (Print) | 0094-243X |
| ISSN (electronic) | 1551-7616 |
Abstract
We use the MarcoPOLO model for the calculation of recombination and contact resistances of poly-Si-based junctions (such as POLO or TOPCon) to quantify the density of states Dit,cSi at the SiOx/c-Si interface of n+/n-type poly-Si based junctions during annealing. We compare the calculations to measurements of the recombination parameter, contact resistance and temperature-dependent contact resistance measurements and describe these measurements with the same set of parameters. We find that a constant Dit,cSi can explain the change of the recombination parameter J0 with increasing annealing temperature. The MarcoPOLO model allows the structural analysis and hence paths for the optimization of poly-Si junctions by e.g. a shallow diffusion below the interfacial oxide.
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SiliconPV 2021 - 11th International Conference on Crystalline Silicon Photovoltaics. ed. / Rolf Brendel; Christophe Ballif; Sebastien Dubois; Stefan Glunz; Giso Hahn; Jef Poortmans; Pierre Verlinden; Arthur Weeber. 2022. 020006 (AIP Conference Proceedings; Vol. 2487).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Modelling the Annealing of Poly-Si/SiOx/c-Si Junctions
AU - Folchert, Nils
AU - Bordihn, Stefan
AU - Peibst, Robby
AU - Brendel, Rolf
N1 - Funding Information: This work was supported by the Ministry for Science and Culture of lower Saxony (project vOx), by the European Union's Horizon 2020 Programme for research, technological development and demonstration Grant Agreements no. 727529 (project DISC) and by the Federal Ministry for Economic Affairs and Energy under grant no 0324171C (project Nextstep).
PY - 2022/8/24
Y1 - 2022/8/24
N2 - We use the MarcoPOLO model for the calculation of recombination and contact resistances of poly-Si-based junctions (such as POLO or TOPCon) to quantify the density of states Dit,cSi at the SiOx/c-Si interface of n+/n-type poly-Si based junctions during annealing. We compare the calculations to measurements of the recombination parameter, contact resistance and temperature-dependent contact resistance measurements and describe these measurements with the same set of parameters. We find that a constant Dit,cSi can explain the change of the recombination parameter J0 with increasing annealing temperature. The MarcoPOLO model allows the structural analysis and hence paths for the optimization of poly-Si junctions by e.g. a shallow diffusion below the interfacial oxide.
AB - We use the MarcoPOLO model for the calculation of recombination and contact resistances of poly-Si-based junctions (such as POLO or TOPCon) to quantify the density of states Dit,cSi at the SiOx/c-Si interface of n+/n-type poly-Si based junctions during annealing. We compare the calculations to measurements of the recombination parameter, contact resistance and temperature-dependent contact resistance measurements and describe these measurements with the same set of parameters. We find that a constant Dit,cSi can explain the change of the recombination parameter J0 with increasing annealing temperature. The MarcoPOLO model allows the structural analysis and hence paths for the optimization of poly-Si junctions by e.g. a shallow diffusion below the interfacial oxide.
UR - http://www.scopus.com/inward/record.url?scp=85137440919&partnerID=8YFLogxK
U2 - 10.1063/5.0089597
DO - 10.1063/5.0089597
M3 - Conference contribution
AN - SCOPUS:85137440919
T3 - AIP Conference Proceedings
BT - SiliconPV 2021 - 11th International Conference on Crystalline Silicon Photovoltaics
A2 - Brendel, Rolf
A2 - Ballif, Christophe
A2 - Dubois, Sebastien
A2 - Glunz, Stefan
A2 - Hahn, Giso
A2 - Poortmans, Jef
A2 - Verlinden, Pierre
A2 - Weeber, Arthur
T2 - 11th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2021
Y2 - 19 April 2021 through 23 April 2021
ER -