Details
| Original language | English |
|---|---|
| Title of host publication | L'induction dans les procédés industriels |
| Subtitle of host publication | congrès international; Paris-La-Defense, 26 - 29 mai 1997 |
| Place of Publication | Paris |
| Pages | 179-184 |
| Volume | 2 |
| Publication status | Published - 1997 |
| Event | International Congress: Electromagnetic Processing of Materials - Paris Duration: 27 May 1997 → 29 May 1997 |
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Modelling of the floating zone growth of large silicon crystals. / Muiznieks, Andris; Raming, Georg; Mühlbauer, Alfred.
L'induction dans les procédés industriels: congrès international; Paris-La-Defense, 26 - 29 mai 1997. Vol. 2 Paris, 1997. p. 179-184.
L'induction dans les procédés industriels: congrès international; Paris-La-Defense, 26 - 29 mai 1997. Vol. 2 Paris, 1997. p. 179-184.
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research
Muiznieks, A, Raming, G & Mühlbauer, A 1997, Modelling of the floating zone growth of large silicon crystals. in L'induction dans les procédés industriels: congrès international; Paris-La-Defense, 26 - 29 mai 1997. vol. 2, Paris, pp. 179-184, International Congress: Electromagnetic Processing of Materials, Paris, 27 May 1997.
Muiznieks, A., Raming, G., & Mühlbauer, A. (1997). Modelling of the floating zone growth of large silicon crystals. In L'induction dans les procédés industriels: congrès international; Paris-La-Defense, 26 - 29 mai 1997 (Vol. 2, pp. 179-184).
Muiznieks A, Raming G, Mühlbauer A. Modelling of the floating zone growth of large silicon crystals. In L'induction dans les procédés industriels: congrès international; Paris-La-Defense, 26 - 29 mai 1997. Vol. 2. Paris. 1997. p. 179-184
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title = "Modelling of the floating zone growth of large silicon crystals",
author = "Andris Muiznieks and Georg Raming and Alfred M{\"u}hlbauer",
year = "1997",
language = "English",
volume = "2",
pages = "179--184",
booktitle = "L'induction dans les proc{\'e}d{\'e}s industriels",
note = "International Congress: Electromagnetic Processing of Materials ; Conference date: 27-05-1997 Through 29-05-1997",
}
Download
TY - GEN
T1 - Modelling of the floating zone growth of large silicon crystals
AU - Muiznieks, Andris
AU - Raming, Georg
AU - Mühlbauer, Alfred
PY - 1997
Y1 - 1997
M3 - Conference contribution
VL - 2
SP - 179
EP - 184
BT - L'induction dans les procédés industriels
CY - Paris
T2 - International Congress: Electromagnetic Processing of Materials
Y2 - 27 May 1997 through 29 May 1997
ER -