Details
| Original language | English |
|---|---|
| Title of host publication | 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 |
| Publication status | Published - 2008 |
| Externally published | Yes |
| Event | 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States Duration: 11 May 2008 → 16 May 2008 |
Publication series
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Abstract
We demonstrate that the boron-oxygen (BsO2i) recombination center responsible for the light-induced degradation of Czochralski silicon solar cells can be deactivated by simultaneous annealing and illumination. After applying this deactivation treatment the improved carrier lifetime is shown to be stable under illumination at room temperature. The measured dependence of the deactivation rate as a function of temperature indicates that the process is thermally activated. Based on the experimental findings a defect reaction model is proposed which attributes the deactivation to a dissociation reaction of a complex XY of unknown composition and to the subsequent association of one component X of this complex with the oxygen dimer O2i into XO2i, thereby reducing the concentration of unbound O2i. An excellent agreement between the experimental and the modeled time dependence of the BsO2i concentration is found.
ASJC Scopus subject areas
- Engineering(all)
- Control and Systems Engineering
- Engineering(all)
- Industrial and Manufacturing Engineering
- Engineering(all)
- Electrical and Electronic Engineering
Cite this
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33rd IEEE Photovoltaic Specialists Conference, PVSC 2008. 2008. 4922482 (Conference Record of the IEEE Photovoltaic Specialists Conference).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Modeling the generation and dissociation of the boron-oxygen complex in B-Doped Cz-Si
AU - Lim, Bianca
AU - Bothe, Karsten
AU - Schmidt, Jan
PY - 2008
Y1 - 2008
N2 - We demonstrate that the boron-oxygen (BsO2i) recombination center responsible for the light-induced degradation of Czochralski silicon solar cells can be deactivated by simultaneous annealing and illumination. After applying this deactivation treatment the improved carrier lifetime is shown to be stable under illumination at room temperature. The measured dependence of the deactivation rate as a function of temperature indicates that the process is thermally activated. Based on the experimental findings a defect reaction model is proposed which attributes the deactivation to a dissociation reaction of a complex XY of unknown composition and to the subsequent association of one component X of this complex with the oxygen dimer O2i into XO2i, thereby reducing the concentration of unbound O2i. An excellent agreement between the experimental and the modeled time dependence of the BsO2i concentration is found.
AB - We demonstrate that the boron-oxygen (BsO2i) recombination center responsible for the light-induced degradation of Czochralski silicon solar cells can be deactivated by simultaneous annealing and illumination. After applying this deactivation treatment the improved carrier lifetime is shown to be stable under illumination at room temperature. The measured dependence of the deactivation rate as a function of temperature indicates that the process is thermally activated. Based on the experimental findings a defect reaction model is proposed which attributes the deactivation to a dissociation reaction of a complex XY of unknown composition and to the subsequent association of one component X of this complex with the oxygen dimer O2i into XO2i, thereby reducing the concentration of unbound O2i. An excellent agreement between the experimental and the modeled time dependence of the BsO2i concentration is found.
UR - http://www.scopus.com/inward/record.url?scp=84879725115&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2008.4922482
DO - 10.1109/PVSC.2008.4922482
M3 - Conference contribution
AN - SCOPUS:84879725115
SN - 9781424416417
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
BT - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
T2 - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
Y2 - 11 May 2008 through 16 May 2008
ER -