Details
| Original language | English |
|---|---|
| Pages (from-to) | 111-113 |
| Number of pages | 3 |
| Journal | Physica Status Solidi - Rapid Research Letters |
| Volume | 6 |
| Issue number | 3 |
| Early online date | 25 Jan 2012 |
| Publication status | Published - Mar 2012 |
Abstract
The formation of local highly aluminum-doped (Al-p +) regions by rapid thermal annealing (firing) of screen-printed aluminum strongly depends on the temperature profile and the contact geometry. We measure the local Al-p + layer thickness W Al-p+ as a function of the point and line contact size. Using quantitative yet simple analytical modeling, the time-dependent silicon concentration in the Al melt is described by elementary differential equations. From this we calculate W Al-p+ and find agreement with the measurements. In contrast to the formation of full area Al-p + layers we find a smaller silicon concentration at the end of the firing process compared to the equilibrium concentration. This is a result of the process dynamics such as the dissolution rate of solid silicon and the transport of silicon in the Al melt.
Keywords
- Annealing, Doping, Metal-semiconductor contacts, Silicon, Solar cells
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physica Status Solidi - Rapid Research Letters, Vol. 6, No. 3, 03.2012, p. 111-113.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Modeling the formation of local highly aluminum-doped silicon regions by rapid thermal annealing of screen-printed aluminum
AU - Müller, Jens
AU - Bothe, Karsten
AU - Gatz, Sebastian
AU - Brendel, Rolf
N1 - Acknowledgements We would like to thank C. Marquardt and T. Neubert for their help with sample processing. This work was supported by the German State of Lower Saxony.
PY - 2012/3
Y1 - 2012/3
N2 - The formation of local highly aluminum-doped (Al-p +) regions by rapid thermal annealing (firing) of screen-printed aluminum strongly depends on the temperature profile and the contact geometry. We measure the local Al-p + layer thickness W Al-p+ as a function of the point and line contact size. Using quantitative yet simple analytical modeling, the time-dependent silicon concentration in the Al melt is described by elementary differential equations. From this we calculate W Al-p+ and find agreement with the measurements. In contrast to the formation of full area Al-p + layers we find a smaller silicon concentration at the end of the firing process compared to the equilibrium concentration. This is a result of the process dynamics such as the dissolution rate of solid silicon and the transport of silicon in the Al melt.
AB - The formation of local highly aluminum-doped (Al-p +) regions by rapid thermal annealing (firing) of screen-printed aluminum strongly depends on the temperature profile and the contact geometry. We measure the local Al-p + layer thickness W Al-p+ as a function of the point and line contact size. Using quantitative yet simple analytical modeling, the time-dependent silicon concentration in the Al melt is described by elementary differential equations. From this we calculate W Al-p+ and find agreement with the measurements. In contrast to the formation of full area Al-p + layers we find a smaller silicon concentration at the end of the firing process compared to the equilibrium concentration. This is a result of the process dynamics such as the dissolution rate of solid silicon and the transport of silicon in the Al melt.
KW - Annealing
KW - Doping
KW - Metal-semiconductor contacts
KW - Silicon
KW - Solar cells
UR - http://www.scopus.com/inward/record.url?scp=84857623464&partnerID=8YFLogxK
U2 - 10.1002/pssr.201105611
DO - 10.1002/pssr.201105611
M3 - Article
AN - SCOPUS:84857623464
VL - 6
SP - 111
EP - 113
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 3
ER -