Modeling the effect of carbon on boron diffusion

Research output: Contribution to conference › Paper › Research › peer review

Authors

  • H. Ruecker
  • B. Heinemann
  • W. Roepke
  • G. Fischer
  • G. Lippert
  • H. J. Osten
  • R. Kurps

External Research Organisations

  • Leibniz Institute for High Performance Microelectronics (IHP)
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Details

Original languageEnglish
Pages281-284
Number of pages4
Publication statusPublished - 1997
Externally publishedYes
Event1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97 - Cambridge, United States
Duration: 8 Sept 1997 → 10 Sept 1997

Conference

Conference1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97
Country/TerritoryUnited States
CityCambridge
Period8 Sept 1997 → 10 Sept 1997

Abstract

Transient diffusion of boron in Si and SiGe can be suppressed effectively by carbon incorporation. In this paper we propose a model which is capable of simulating the effect of grown-in substitutional carbon on boron diffusion during thermal annealing and annealing of implantation damage. The model is applied to transient enhanced diffusion (TED) of boron in npn SiGe heterojunction bipolar transistors (HBTs).

ASJC Scopus subject areas

Cite this

Modeling the effect of carbon on boron diffusion. / Ruecker, H.; Heinemann, B.; Roepke, W. et al.
1997. 281-284 Paper presented at 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97, Cambridge, Massachusetts, United States.

Research output: Contribution to conference › Paper › Research › peer review

Ruecker, H, Heinemann, B, Roepke, W, Fischer, G, Lippert, G, Osten, HJ & Kurps, R 1997, 'Modeling the effect of carbon on boron diffusion', Paper presented at 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97, Cambridge, United States, 8 Sept 1997 - 10 Sept 1997 pp. 281-284.
Ruecker, H., Heinemann, B., Roepke, W., Fischer, G., Lippert, G., Osten, H. J., & Kurps, R. (1997). Modeling the effect of carbon on boron diffusion. 281-284. Paper presented at 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97, Cambridge, Massachusetts, United States.
Ruecker H, Heinemann B, Roepke W, Fischer G, Lippert G, Osten HJ et al.. Modeling the effect of carbon on boron diffusion. 1997. Paper presented at 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97, Cambridge, Massachusetts, United States.
Ruecker, H. ; Heinemann, B. ; Roepke, W. et al. / Modeling the effect of carbon on boron diffusion. Paper presented at 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97, Cambridge, Massachusetts, United States.4 p.
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AU - Roepke, W.

AU - Fischer, G.

AU - Lippert, G.

AU - Osten, H. J.

AU - Kurps, R.

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