Details
| Original language | English |
|---|---|
| Pages (from-to) | 1289-1307 |
| Number of pages | 19 |
| Journal | Progress in Photovoltaics: Research and Applications |
| Volume | 28 |
| Issue number | 12 |
| Early online date | 24 Aug 2020 |
| Publication status | Published - 27 Nov 2020 |
Abstract
We present a semi-analytical model for the calculation of the current through and the recombination in carrier-selective junctions consisting of a poly-Si/SiOx/c-Si layer stack. We calculate the recombination parameter J0 and the contact resistance ρC after solving the band-bending-problem on both sides of the interfacial oxide. Comparisons with finite-element simulations show that the current calculation is reliable at all bias conditions except for inversion and that current through pinholes is resolved adequately in the model. The model allows a coherent description of lifetime-, current-voltage- and capacitance-voltage measurements performed on a sample with dominant tunneling. We use our model to investigate the influence of oxide thickness and pinhole density on J0 and ρC of our state-of-the-art poly-silicon-on-oxide (POLO) junctions and demonstrate its usefulness for the optimization of poly-Si based junctions.
Keywords
- carrier-selective-junction, contact resistance, passivating contact, pinhole, POLO, poly-Si, surface recombination, tunneling
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
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In: Progress in Photovoltaics: Research and Applications, Vol. 28, No. 12, 27.11.2020, p. 1289-1307.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Modeling recombination and contact resistance of poly-Si junctions
AU - Folchert, Nils
AU - Peibst, Robby
AU - Brendel, Rolf
N1 - Funding Information: We gratefully thank Guido Glowatzki for the sample preparation, Audie Adam Yeo and Liz Montanez for help with measurements, and Uwe Rau for helpful discussions. This work was supported by the Ministry of Science and Culture of lower Saxony in the framework of the project vOx and has also received funding from the European Union's Horizon 2020 research and innovation program under grant agreement no 727529 (DISC).
PY - 2020/11/27
Y1 - 2020/11/27
N2 - We present a semi-analytical model for the calculation of the current through and the recombination in carrier-selective junctions consisting of a poly-Si/SiOx/c-Si layer stack. We calculate the recombination parameter J0 and the contact resistance ρC after solving the band-bending-problem on both sides of the interfacial oxide. Comparisons with finite-element simulations show that the current calculation is reliable at all bias conditions except for inversion and that current through pinholes is resolved adequately in the model. The model allows a coherent description of lifetime-, current-voltage- and capacitance-voltage measurements performed on a sample with dominant tunneling. We use our model to investigate the influence of oxide thickness and pinhole density on J0 and ρC of our state-of-the-art poly-silicon-on-oxide (POLO) junctions and demonstrate its usefulness for the optimization of poly-Si based junctions.
AB - We present a semi-analytical model for the calculation of the current through and the recombination in carrier-selective junctions consisting of a poly-Si/SiOx/c-Si layer stack. We calculate the recombination parameter J0 and the contact resistance ρC after solving the band-bending-problem on both sides of the interfacial oxide. Comparisons with finite-element simulations show that the current calculation is reliable at all bias conditions except for inversion and that current through pinholes is resolved adequately in the model. The model allows a coherent description of lifetime-, current-voltage- and capacitance-voltage measurements performed on a sample with dominant tunneling. We use our model to investigate the influence of oxide thickness and pinhole density on J0 and ρC of our state-of-the-art poly-silicon-on-oxide (POLO) junctions and demonstrate its usefulness for the optimization of poly-Si based junctions.
KW - carrier-selective-junction
KW - contact resistance
KW - passivating contact
KW - pinhole
KW - POLO
KW - poly-Si
KW - surface recombination
KW - tunneling
UR - http://www.scopus.com/inward/record.url?scp=85089734929&partnerID=8YFLogxK
U2 - 10.1002/pip.3327
DO - 10.1002/pip.3327
M3 - Article
AN - SCOPUS:85089734929
VL - 28
SP - 1289
EP - 1307
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
SN - 1062-7995
IS - 12
ER -