Migration induced material transport in Cu-Sn IMC and SnAgCu microbumps

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Original languageEnglish
Pages (from-to)1860-1864
Number of pages5
JournalMicroelectronics reliability
Volume51
Issue number9-11
Publication statusPublished - Sept 2011

Abstract

Microbumps consisting of intermetallic compounds like Cu6Sn 5 or Cu3Sn have a longer lifetime during electromigration tests than SnAgCu microbumps. To explain the difference in behavior of Cu-Sn IMCs and SnAgCu during stress test the migration induced mass flux was calculated for Cu3Sn and Cu6Sn5. The results were compared to the mass flux in SnAgCu 305. Furthermore average effective charge values for Cu3Sn and Cu6Sn5 were approximated by comparing the separated movement of Cu and Sn with three different models for an averaged mass flux in the IMCs.

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Migration induced material transport in Cu-Sn IMC and SnAgCu microbumps. / Meinshausen, L.; Weide-Zaage, K.; Frémont, H.
In: Microelectronics reliability, Vol. 51, No. 9-11, 09.2011, p. 1860-1864.

Research output: Contribution to journalArticleResearchpeer review

Meinshausen L, Weide-Zaage K, Frémont H. Migration induced material transport in Cu-Sn IMC and SnAgCu microbumps. Microelectronics reliability. 2011 Sept;51(9-11):1860-1864. doi: 10.1016/j.microrel.2011.06.032
Meinshausen, L. ; Weide-Zaage, K. ; Frémont, H. / Migration induced material transport in Cu-Sn IMC and SnAgCu microbumps. In: Microelectronics reliability. 2011 ; Vol. 51, No. 9-11. pp. 1860-1864.
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AU - Frémont, H.

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