Migration induced IMC formation in SAC305 solder joints on Cu, NiAu and NiP metal layers

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Original languageEnglish
Pages (from-to)1827-1832
Number of pages6
JournalMicroelectronics reliability
Volume52
Issue number9-10
Publication statusPublished - Sept 2012

Abstract

Because of material movements intermetallic compound layers are formed between metal layers and solder joints. These intermetallics affect the reliability of the solder joints by reducing their lifetime during drop test or by accelerating the migration induced void formation. This study investigates the migration kinetics of Cu, Ni, Au and Sn in SAC305 solder joints on three different metal layers: Cu, NiAu and NiP. The aim of this study is the identification and description of migration processes during aging of solder joints with one and double sided Ni diffusion barriers.

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Migration induced IMC formation in SAC305 solder joints on Cu, NiAu and NiP metal layers. / Meinshausen, L.; Frémont, H.; Weide-Zaage, K.
In: Microelectronics reliability, Vol. 52, No. 9-10, 09.2012, p. 1827-1832.

Research output: Contribution to journalArticleResearchpeer review

Meinshausen L, Frémont H, Weide-Zaage K. Migration induced IMC formation in SAC305 solder joints on Cu, NiAu and NiP metal layers. Microelectronics reliability. 2012 Sept;52(9-10):1827-1832. doi: 10.1016/j.microrel.2012.06.127
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@article{b15066ae3ec44493bb607edb55af5137,
title = "Migration induced IMC formation in SAC305 solder joints on Cu, NiAu and NiP metal layers",
abstract = "Because of material movements intermetallic compound layers are formed between metal layers and solder joints. These intermetallics affect the reliability of the solder joints by reducing their lifetime during drop test or by accelerating the migration induced void formation. This study investigates the migration kinetics of Cu, Ni, Au and Sn in SAC305 solder joints on three different metal layers: Cu, NiAu and NiP. The aim of this study is the identification and description of migration processes during aging of solder joints with one and double sided Ni diffusion barriers.",
author = "L. Meinshausen and H. Fr{\'e}mont and K. Weide-Zaage",
note = "Copyright: Copyright 2012 Elsevier B.V., All rights reserved.",
year = "2012",
month = sep,
doi = "10.1016/j.microrel.2012.06.127",
language = "English",
volume = "52",
pages = "1827--1832",
journal = "Microelectronics reliability",
issn = "0026-2714",
publisher = "Elsevier Ltd.",
number = "9-10",

}

Download

TY - JOUR

T1 - Migration induced IMC formation in SAC305 solder joints on Cu, NiAu and NiP metal layers

AU - Meinshausen, L.

AU - Frémont, H.

AU - Weide-Zaage, K.

N1 - Copyright: Copyright 2012 Elsevier B.V., All rights reserved.

PY - 2012/9

Y1 - 2012/9

N2 - Because of material movements intermetallic compound layers are formed between metal layers and solder joints. These intermetallics affect the reliability of the solder joints by reducing their lifetime during drop test or by accelerating the migration induced void formation. This study investigates the migration kinetics of Cu, Ni, Au and Sn in SAC305 solder joints on three different metal layers: Cu, NiAu and NiP. The aim of this study is the identification and description of migration processes during aging of solder joints with one and double sided Ni diffusion barriers.

AB - Because of material movements intermetallic compound layers are formed between metal layers and solder joints. These intermetallics affect the reliability of the solder joints by reducing their lifetime during drop test or by accelerating the migration induced void formation. This study investigates the migration kinetics of Cu, Ni, Au and Sn in SAC305 solder joints on three different metal layers: Cu, NiAu and NiP. The aim of this study is the identification and description of migration processes during aging of solder joints with one and double sided Ni diffusion barriers.

UR - http://www.scopus.com/inward/record.url?scp=84866735376&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2012.06.127

DO - 10.1016/j.microrel.2012.06.127

M3 - Article

AN - SCOPUS:84866735376

VL - 52

SP - 1827

EP - 1832

JO - Microelectronics reliability

JF - Microelectronics reliability

SN - 0026-2714

IS - 9-10

ER -

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