Details
| Original language | English |
|---|---|
| Article number | 108917 |
| Journal | Diamond and related materials |
| Volume | 124 |
| Publication status | Published - Apr 2022 |
| Externally published | Yes |
Abstract
A microwave plasma model of a chemical vapour deposition (CVD) reactor is presented for understanding spatial heteroepitaxial growth of polycrystalline diamond on Si. This work is based on the TM 0(n>1) clamshell style reactor (Seki Diamond/ASTEX SDS 6K, Carat CTS6U, ARDIS-100 style) whereby a simplified H 2 plasma model is used to show the radial variation in growth rate over small samples with different sample holders. The model uses several steps: an electromagnetic (EM) eigenfrequency solution, a frequency-transient EM/plasma fluid solution and a transient heat transfer solution at low and high microwave power densities. Experimental growths provide model validation with characterisation using Raman spectroscopy and scanning electron microscopy. This work demonstrates that shallow holders result in non-uniform diamond films, with a radial variation akin to the electron density, atomic H density and temperature distribution at the wafer surface. For the same process conditions, greater homogeneity is observed for taller holders, however, if the height is too extreme, the diamond quality reduces. From a modelling perspective, EM solutions are limited but useful for examining electric field focusing at the sample edges, resulting in accelerated diamond growth. For better accuracy, plasma fluid and heat transfer solutions are imperative for modelling spatial growth variation.
Keywords
- Cvd diamond, Finite element modelling, Microwave plasma model
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Engineering(all)
- Mechanical Engineering
- Materials Science(all)
- Materials Chemistry
- Chemistry(all)
- General Chemistry
- Engineering(all)
- Electrical and Electronic Engineering
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In: Diamond and related materials, Vol. 124, 108917, 04.2022.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Microwave plasma modelling in clamshell chemical vapour deposition diamond reactors
AU - Cuenca, Jerome A.
AU - Mandal, Soumen
AU - Thomas, Evan L.H.
AU - Williams, Oliver A.
N1 - Publisher Copyright: © 2022 The Author(s)
PY - 2022/4
Y1 - 2022/4
N2 - A microwave plasma model of a chemical vapour deposition (CVD) reactor is presented for understanding spatial heteroepitaxial growth of polycrystalline diamond on Si. This work is based on the TM 0(n>1) clamshell style reactor (Seki Diamond/ASTEX SDS 6K, Carat CTS6U, ARDIS-100 style) whereby a simplified H 2 plasma model is used to show the radial variation in growth rate over small samples with different sample holders. The model uses several steps: an electromagnetic (EM) eigenfrequency solution, a frequency-transient EM/plasma fluid solution and a transient heat transfer solution at low and high microwave power densities. Experimental growths provide model validation with characterisation using Raman spectroscopy and scanning electron microscopy. This work demonstrates that shallow holders result in non-uniform diamond films, with a radial variation akin to the electron density, atomic H density and temperature distribution at the wafer surface. For the same process conditions, greater homogeneity is observed for taller holders, however, if the height is too extreme, the diamond quality reduces. From a modelling perspective, EM solutions are limited but useful for examining electric field focusing at the sample edges, resulting in accelerated diamond growth. For better accuracy, plasma fluid and heat transfer solutions are imperative for modelling spatial growth variation.
AB - A microwave plasma model of a chemical vapour deposition (CVD) reactor is presented for understanding spatial heteroepitaxial growth of polycrystalline diamond on Si. This work is based on the TM 0(n>1) clamshell style reactor (Seki Diamond/ASTEX SDS 6K, Carat CTS6U, ARDIS-100 style) whereby a simplified H 2 plasma model is used to show the radial variation in growth rate over small samples with different sample holders. The model uses several steps: an electromagnetic (EM) eigenfrequency solution, a frequency-transient EM/plasma fluid solution and a transient heat transfer solution at low and high microwave power densities. Experimental growths provide model validation with characterisation using Raman spectroscopy and scanning electron microscopy. This work demonstrates that shallow holders result in non-uniform diamond films, with a radial variation akin to the electron density, atomic H density and temperature distribution at the wafer surface. For the same process conditions, greater homogeneity is observed for taller holders, however, if the height is too extreme, the diamond quality reduces. From a modelling perspective, EM solutions are limited but useful for examining electric field focusing at the sample edges, resulting in accelerated diamond growth. For better accuracy, plasma fluid and heat transfer solutions are imperative for modelling spatial growth variation.
KW - Cvd diamond
KW - Finite element modelling
KW - Microwave plasma model
UR - http://www.scopus.com/inward/record.url?scp=85125579234&partnerID=8YFLogxK
U2 - 10.1016/j.diamond.2022.108917
DO - 10.1016/j.diamond.2022.108917
M3 - Article
VL - 124
JO - Diamond and related materials
JF - Diamond and related materials
SN - 0925-9635
M1 - 108917
ER -