Details
| Original language | English |
|---|---|
| Title of host publication | Gettering and Defect Engineering in Semiconductor Technology, GADEST 93 |
| Editors | H.G. Grimmeiss, M. Kittler, H. Richter |
| Pages | 577-582 |
| Number of pages | 6 |
| Publication status | Published - 12 Dec 1993 |
| Externally published | Yes |
| Event | 5th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST 1993 - Chossewitz, Frankfurt (Oder), Germany Duration: 9 Oct 1993 → 14 Oct 1993 |
Publication series
| Name | Solid State Phenomena |
|---|---|
| Volume | 32-33 |
| ISSN (Print) | 1012-0394 |
| ISSN (electronic) | 1662-9779 |
Abstract
The Raman-line shift of the Si-Si mode in a Sil-xGex layer depends on the Ge-content as well as the strain. An independent measurement of the Ge content, e. g. by X-ray diffraction, allows the determination of the strain. The relation of this value to the extreme one of an ideal pseudomorphic layer is a measure for the degree of relaxation. Raman backscattering under a microscope (micro-Raman spectroscopy) is able to measure the phonon line-shift in a spot of 0.7 µm diameter. Local strains in microscopic structures can be measured with micro-Raman spectroscopy. They show both, an elastic strain relief and a plastic relaxation. The amounts of elastic strain relief and of plastic relaxation can be derived considering the density of misfit dislocations, determined by transmission electron microscopy. Sil-xGex layers on patterned substrates were investigated as grown and after annealing. The Raman shift, measured in areas having different widths, shows the different behaviour of elastic and plastic relaxed regions during annealing.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
Cite this
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Gettering and Defect Engineering in Semiconductor Technology, GADEST 93. ed. / H.G. Grimmeiss; M. Kittler; H. Richter. 1993. p. 577-582 (Solid State Phenomena; Vol. 32-33).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Micro-Raman investigations of elastic and plastic strain relief in Si1-xGex-heterostructures
AU - Dietrich, B.
AU - Bugiel, E.
AU - Osten, H. J.
AU - Zaumseil, P.
PY - 1993/12/12
Y1 - 1993/12/12
N2 - The Raman-line shift of the Si-Si mode in a Sil-xGex layer depends on the Ge-content as well as the strain. An independent measurement of the Ge content, e. g. by X-ray diffraction, allows the determination of the strain. The relation of this value to the extreme one of an ideal pseudomorphic layer is a measure for the degree of relaxation. Raman backscattering under a microscope (micro-Raman spectroscopy) is able to measure the phonon line-shift in a spot of 0.7 µm diameter. Local strains in microscopic structures can be measured with micro-Raman spectroscopy. They show both, an elastic strain relief and a plastic relaxation. The amounts of elastic strain relief and of plastic relaxation can be derived considering the density of misfit dislocations, determined by transmission electron microscopy. Sil-xGex layers on patterned substrates were investigated as grown and after annealing. The Raman shift, measured in areas having different widths, shows the different behaviour of elastic and plastic relaxed regions during annealing.
AB - The Raman-line shift of the Si-Si mode in a Sil-xGex layer depends on the Ge-content as well as the strain. An independent measurement of the Ge content, e. g. by X-ray diffraction, allows the determination of the strain. The relation of this value to the extreme one of an ideal pseudomorphic layer is a measure for the degree of relaxation. Raman backscattering under a microscope (micro-Raman spectroscopy) is able to measure the phonon line-shift in a spot of 0.7 µm diameter. Local strains in microscopic structures can be measured with micro-Raman spectroscopy. They show both, an elastic strain relief and a plastic relaxation. The amounts of elastic strain relief and of plastic relaxation can be derived considering the density of misfit dislocations, determined by transmission electron microscopy. Sil-xGex layers on patterned substrates were investigated as grown and after annealing. The Raman shift, measured in areas having different widths, shows the different behaviour of elastic and plastic relaxed regions during annealing.
UR - http://www.scopus.com/inward/record.url?scp=6244303592&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/SSP.32-33.577
DO - 10.4028/www.scientific.net/SSP.32-33.577
M3 - Conference contribution
AN - SCOPUS:6244303592
SN - 9783908450009
T3 - Solid State Phenomena
SP - 577
EP - 582
BT - Gettering and Defect Engineering in Semiconductor Technology, GADEST 93
A2 - Grimmeiss, H.G.
A2 - Kittler, M.
A2 - Richter, H.
T2 - 5th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST 1993
Y2 - 9 October 1993 through 14 October 1993
ER -