Details
| Original language | English |
|---|---|
| Title of host publication | Optical Components and Materials XVI |
| Editors | Michel J. F. Digonnet, Shibin Jiang |
| Publisher | SPIE |
| Number of pages | 7 |
| ISBN (electronic) | 9781510624702 |
| Publication status | Published - 27 Feb 2019 |
| Event | Optical Components and Materials XVI 2019 - San Francisco, United States Duration: 4 Feb 2019 → 6 Feb 2019 |
Publication series
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Volume | 10914 |
| ISSN (Print) | 0277-786X |
| ISSN (electronic) | 1996-756X |
Abstract
We report on the fabrication and characterisation of an all-epitaxial Germanium-on-Insulator (GOI) Metal-Semiconductor-Metal (MSM) photodetector. The MSM photodetector is fabricated on a (111)-oriented epitaxial Ge layer, grown on an epitaxial Gd2O3/Si(111) substrate, by molecular beam epitaxy (MBE). The first step is the growth of the 15-nm thick Gd2O3 epitaxial layer over CMOS-grade silicon, atop which an epitaxial layer of Ge is grown. Near infrared (NIR) MSM photodetectors have been fabricated over the Ge epitaxial layer with an inter-digitated (IDT) contact structure, with an active area of 100 μm x 124 μm. For the particular IDT dimensions, the dark current has been measured to be 475 μA. A responsivity of ∼ 2 mA/W is observed at a-5V bias, when excited at 1550 nm.
Keywords
- Germanium, Germanium-on-insulator, Molecular beam epitaxy, MSM photodiodes, NIR photodetector, Silicon photonics
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Computer Science(all)
- Computer Science Applications
- Mathematics(all)
- Applied Mathematics
- Engineering(all)
- Electrical and Electronic Engineering
Cite this
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- Harvard
- Apa
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- BibTeX
- RIS
Optical Components and Materials XVI. ed. / Michel J. F. Digonnet; Shibin Jiang. SPIE, 2019. 1091417 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10914).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Metal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on-Si(111), grown by molecular beam epitaxy
AU - Pokharia, R. S.
AU - Khiangte, K. R.
AU - Rathore, J. S.
AU - Schmidt, Jan
AU - Osten, Hans-Jörg
AU - Laha, A.
AU - Mahapatra, S.
N1 - Funding information: This research was funded by the Science and Engineering Research Board, Department of Science and Technology (DST), Government of India. Ravindra Singh Pokharia would also like to thank Kantimay Dasgupta, Aditya Jain, Swarup Deb and Himadri Chakraborty for their assistance during the metallization of the devices. The authors acknowledge the support from the Centre of Excellence in Nanotechnology, Departments of Physics and Electrical Engineering, and Industrial Research and Consulting Centre (IRCC) of IIT Bombay.
PY - 2019/2/27
Y1 - 2019/2/27
N2 - We report on the fabrication and characterisation of an all-epitaxial Germanium-on-Insulator (GOI) Metal-Semiconductor-Metal (MSM) photodetector. The MSM photodetector is fabricated on a (111)-oriented epitaxial Ge layer, grown on an epitaxial Gd2O3/Si(111) substrate, by molecular beam epitaxy (MBE). The first step is the growth of the 15-nm thick Gd2O3 epitaxial layer over CMOS-grade silicon, atop which an epitaxial layer of Ge is grown. Near infrared (NIR) MSM photodetectors have been fabricated over the Ge epitaxial layer with an inter-digitated (IDT) contact structure, with an active area of 100 μm x 124 μm. For the particular IDT dimensions, the dark current has been measured to be 475 μA. A responsivity of ∼ 2 mA/W is observed at a-5V bias, when excited at 1550 nm.
AB - We report on the fabrication and characterisation of an all-epitaxial Germanium-on-Insulator (GOI) Metal-Semiconductor-Metal (MSM) photodetector. The MSM photodetector is fabricated on a (111)-oriented epitaxial Ge layer, grown on an epitaxial Gd2O3/Si(111) substrate, by molecular beam epitaxy (MBE). The first step is the growth of the 15-nm thick Gd2O3 epitaxial layer over CMOS-grade silicon, atop which an epitaxial layer of Ge is grown. Near infrared (NIR) MSM photodetectors have been fabricated over the Ge epitaxial layer with an inter-digitated (IDT) contact structure, with an active area of 100 μm x 124 μm. For the particular IDT dimensions, the dark current has been measured to be 475 μA. A responsivity of ∼ 2 mA/W is observed at a-5V bias, when excited at 1550 nm.
KW - Germanium
KW - Germanium-on-insulator
KW - Molecular beam epitaxy
KW - MSM photodiodes
KW - NIR photodetector
KW - Silicon photonics
UR - http://www.scopus.com/inward/record.url?scp=85066018831&partnerID=8YFLogxK
U2 - 10.15488/10267
DO - 10.15488/10267
M3 - Conference contribution
AN - SCOPUS:85066018831
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Optical Components and Materials XVI
A2 - Digonnet, Michel J. F.
A2 - Jiang, Shibin
PB - SPIE
T2 - Optical Components and Materials XVI 2019
Y2 - 4 February 2019 through 6 February 2019
ER -