Details
| Original language | English |
|---|---|
| Pages (from-to) | D310-D313 |
| Journal | Journal of the Electrochemical Society |
| Volume | 156 |
| Issue number | 8 |
| Early online date | 10 Jun 2009 |
| Publication status | Published - 2009 |
| Externally published | Yes |
Abstract
Uniform thick mesoporous germanium layers are reproducibly formed on 4 in. p-type Ge wafers by electrochemical etching in highly concentrated HF electrolytes. Pore formation by anodic etching in germanium leads to a constant dissolution of the porous layer. The growth rate of the porous Ge layer is therefore given by the difference between the etch rate at the porous layer/substrate wafer interface and the dissolution rate at the electrolyte/porous layer interface. The growth rate lies in the range of 0.071-2.7 nm/min for etching current densities of 0.1-80 mA/ cm2, while both the etch rate and the dissolution rate lie in the range of several micrometers per minute. We define the substrate usage as the ratio of the growth rate and the etch rate. This substrate usage determines the growth efficiency of the porous layer and lies in the range of 0.2-2%. Thus, the substrate wafer is thinned substantially during anodic porous layer formation. Constantly alternating from an anodic to a cathodic bias prevents the thinning of the substrate. The dissolution rate decreases, and the usage increases up to 98%.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Materials Science(all)
- Surfaces, Coatings and Films
- Chemistry(all)
- Electrochemistry
- Materials Science(all)
- Materials Chemistry
Sustainable Development Goals
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In: Journal of the Electrochemical Society, Vol. 156, No. 8, 2009, p. D310-D313.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Mesoporous germanium formation by electrochemical etching
AU - Garralaga Rojas, E.
AU - Plagwitz, H.
AU - Terheiden, B.
AU - Hensen, J.
AU - Baur, C.
AU - La Roche, G.
AU - Strobl, G. F.X.
AU - Brendel, R.
N1 - Funding Information: The financial support of this work by the German Ministry for Economy and Technology under contract no. 50JR0641 is gratefully acknowledged. E.G.R. especially thanks the European Space Agency for the financial sup- port of his work in the framework of the Networking Partnering Initiative (contract no. 20250/06/NL/GLC).
PY - 2009
Y1 - 2009
N2 - Uniform thick mesoporous germanium layers are reproducibly formed on 4 in. p-type Ge wafers by electrochemical etching in highly concentrated HF electrolytes. Pore formation by anodic etching in germanium leads to a constant dissolution of the porous layer. The growth rate of the porous Ge layer is therefore given by the difference between the etch rate at the porous layer/substrate wafer interface and the dissolution rate at the electrolyte/porous layer interface. The growth rate lies in the range of 0.071-2.7 nm/min for etching current densities of 0.1-80 mA/ cm2, while both the etch rate and the dissolution rate lie in the range of several micrometers per minute. We define the substrate usage as the ratio of the growth rate and the etch rate. This substrate usage determines the growth efficiency of the porous layer and lies in the range of 0.2-2%. Thus, the substrate wafer is thinned substantially during anodic porous layer formation. Constantly alternating from an anodic to a cathodic bias prevents the thinning of the substrate. The dissolution rate decreases, and the usage increases up to 98%.
AB - Uniform thick mesoporous germanium layers are reproducibly formed on 4 in. p-type Ge wafers by electrochemical etching in highly concentrated HF electrolytes. Pore formation by anodic etching in germanium leads to a constant dissolution of the porous layer. The growth rate of the porous Ge layer is therefore given by the difference between the etch rate at the porous layer/substrate wafer interface and the dissolution rate at the electrolyte/porous layer interface. The growth rate lies in the range of 0.071-2.7 nm/min for etching current densities of 0.1-80 mA/ cm2, while both the etch rate and the dissolution rate lie in the range of several micrometers per minute. We define the substrate usage as the ratio of the growth rate and the etch rate. This substrate usage determines the growth efficiency of the porous layer and lies in the range of 0.2-2%. Thus, the substrate wafer is thinned substantially during anodic porous layer formation. Constantly alternating from an anodic to a cathodic bias prevents the thinning of the substrate. The dissolution rate decreases, and the usage increases up to 98%.
UR - http://www.scopus.com/inward/record.url?scp=67650569163&partnerID=8YFLogxK
U2 - 10.1149/1.3147271
DO - 10.1149/1.3147271
M3 - Article
AN - SCOPUS:67650569163
VL - 156
SP - D310-D313
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
SN - 0013-4651
IS - 8
ER -