Details
| Original language | English |
|---|---|
| Pages (from-to) | 255-259 |
| Number of pages | 5 |
| Journal | Physica Status Solidi (A) Applied Research |
| Volume | 109 |
| Issue number | 1 |
| Publication status | Published - 16 Sept 1988 |
Abstract
The mechanism of voltage generation in thin metal film detectors is investigated. For this purpose non‐oxidized Bi films of different widths and thicknesses are prepared and irradiated by a cw Nd‐Yag laser. Voltages are detected in all the samples. In order to detect nanosecond pulses, a pulsed Nd‐Yag laser is used to irradiate oxidized as well as non‐oxidized samples. Pulse lengths of 14 ns are observed by thin Bi film detectors. A theoretical calculation of voltage as a function of thickness is made by calculating the temperature rise in the Bi films and compared with the measured voltages.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Physica Status Solidi (A) Applied Research, Vol. 109, No. 1, 16.09.1988, p. 255-259.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Mechanism of voltage generation in Bi films due to laser irradiation
AU - Akhtar, S. M. Javed
AU - Ristau, Detlev
PY - 1988/9/16
Y1 - 1988/9/16
N2 - The mechanism of voltage generation in thin metal film detectors is investigated. For this purpose non‐oxidized Bi films of different widths and thicknesses are prepared and irradiated by a cw Nd‐Yag laser. Voltages are detected in all the samples. In order to detect nanosecond pulses, a pulsed Nd‐Yag laser is used to irradiate oxidized as well as non‐oxidized samples. Pulse lengths of 14 ns are observed by thin Bi film detectors. A theoretical calculation of voltage as a function of thickness is made by calculating the temperature rise in the Bi films and compared with the measured voltages.
AB - The mechanism of voltage generation in thin metal film detectors is investigated. For this purpose non‐oxidized Bi films of different widths and thicknesses are prepared and irradiated by a cw Nd‐Yag laser. Voltages are detected in all the samples. In order to detect nanosecond pulses, a pulsed Nd‐Yag laser is used to irradiate oxidized as well as non‐oxidized samples. Pulse lengths of 14 ns are observed by thin Bi film detectors. A theoretical calculation of voltage as a function of thickness is made by calculating the temperature rise in the Bi films and compared with the measured voltages.
UR - http://www.scopus.com/inward/record.url?scp=0024070650&partnerID=8YFLogxK
U2 - 10.1002/pssa.2211090127
DO - 10.1002/pssa.2211090127
M3 - Article
AN - SCOPUS:0024070650
VL - 109
SP - 255
EP - 259
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
SN - 0031-8965
IS - 1
ER -