Measurement of stress and relaxation in Si1-xGex layers by Raman line shift and x-ray diffraction

Research output: Contribution to journal › Article › Research › peer review

Authors

  • B. Dietrich
  • E. Bugiel
  • J. Klatt
  • G. Lippert
  • T. Morgenstern
  • H. J. Osten
  • P. Zaumseil

External Research Organisations

  • Leibniz Institute for High Performance Microelectronics (IHP)
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Details

Original languageEnglish
Pages (from-to)3177-3180
Number of pages4
JournalJournal of applied physics
Volume74
Issue number5
Publication statusPublished - 1 Sept 1993
Externally publishedYes

Abstract

Epitaxial Si1-xGex layers, grown by molecular beam epitaxy (MBE) and by chemical vapor deposition (CVD) on Si(001) substrates, with thicknesses between 20 and 50 nm and Ge contents from 4% to 23% were investigated by micro Raman backscattering, x-ray double crystal diffractometry, and transmission electron microscopy. A quite simple phenomenological model was developed to derive the Raman shift of the Si-Si mode as a function of the germanium content for the two limiting cases, the pseudomorphically strained layer, and the alloy-like stress-free layer. A measure for the degree of relaxation can be obtained from the measured Raman shift and from the independently determined germanium content, using the results of the model. The degree of relaxation was determined for a number of CVD- and MBE-grown Si 1-xGex layers. The as-grown pseudomorphic layers relax partially after annealing at 900°C. The Raman scattering allows the monitoring of the development of relaxation during the semiconductor device processing.

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Cite this

Measurement of stress and relaxation in Si1-xGex layers by Raman line shift and x-ray diffraction. / Dietrich, B.; Bugiel, E.; Klatt, J. et al.
In: Journal of applied physics, Vol. 74, No. 5, 01.09.1993, p. 3177-3180.

Research output: Contribution to journal › Article › Research › peer review

Dietrich, B, Bugiel, E, Klatt, J, Lippert, G, Morgenstern, T, Osten, HJ & Zaumseil, P 1993, 'Measurement of stress and relaxation in Si1-xGex layers by Raman line shift and x-ray diffraction', Journal of applied physics, vol. 74, no. 5, pp. 3177-3180. https://doi.org/10.1063/1.354587
Dietrich, B., Bugiel, E., Klatt, J., Lippert, G., Morgenstern, T., Osten, H. J., & Zaumseil, P. (1993). Measurement of stress and relaxation in Si1-xGex layers by Raman line shift and x-ray diffraction. Journal of applied physics, 74(5), 3177-3180. https://doi.org/10.1063/1.354587
Dietrich B, Bugiel E, Klatt J, Lippert G, Morgenstern T, Osten HJ et al. Measurement of stress and relaxation in Si1-xGex layers by Raman line shift and x-ray diffraction. Journal of applied physics. 1993 Sept 1;74(5):3177-3180. doi: 10.1063/1.354587
Dietrich, B. ; Bugiel, E. ; Klatt, J. et al. / Measurement of stress and relaxation in Si1-xGex layers by Raman line shift and x-ray diffraction. In: Journal of applied physics. 1993 ; Vol. 74, No. 5. pp. 3177-3180.
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abstract = "Epitaxial Si1-xGex layers, grown by molecular beam epitaxy (MBE) and by chemical vapor deposition (CVD) on Si(001) substrates, with thicknesses between 20 and 50 nm and Ge contents from 4% to 23% were investigated by micro Raman backscattering, x-ray double crystal diffractometry, and transmission electron microscopy. A quite simple phenomenological model was developed to derive the Raman shift of the Si-Si mode as a function of the germanium content for the two limiting cases, the pseudomorphically strained layer, and the alloy-like stress-free layer. A measure for the degree of relaxation can be obtained from the measured Raman shift and from the independently determined germanium content, using the results of the model. The degree of relaxation was determined for a number of CVD- and MBE-grown Si 1-xGex layers. The as-grown pseudomorphic layers relax partially after annealing at 900°C. The Raman scattering allows the monitoring of the development of relaxation during the semiconductor device processing.",
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AU - Dietrich, B.

AU - Bugiel, E.

AU - Klatt, J.

AU - Lippert, G.

AU - Morgenstern, T.

AU - Osten, H. J.

AU - Zaumseil, P.

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