MBE-grown Si and Si1-xGex quantum dots embedded within epitaxial Gd2O3 on Si(111) substrate for floating gate memory device

Research output: Contribution to journal › Article › Research › peer review

Authors

  • S. Manna
  • R. Aluguri
  • A. Katiyar
  • S. Das
  • A. Laha
  • H. J. Osten
  • S. K. Ray

Research Organisations

External Research Organisations

  • Indian Institute of Technology Kharagpur (IITKGP)
  • Hitachi Cambridge Laboratory
  • Indian Institute of Technology Bombay (IITB)
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Details

Original languageEnglish
Article number505709
JournalNANOTECHNOLOGY
Volume24
Issue number50
Publication statusPublished - 20 Dec 2013

Abstract

Si and Si1-xGex quantum dots embedded within epitaxial Gd2O3 grown by molecular beam epitaxy have been studied for application in floating gate memory devices. The effect of interface traps and the role of quantum dots on the memory properties have been studied using frequency-dependent capacitance-voltage and conductance-voltage measurements. Multilayer quantum dot memory comprising four and five layers of Si quantum dots exhibits a superior memory window to that of single-layer quantum dot memory devices. It has also been observed that single-layer Si 1-xGex quantum dots show better memory characteristics than single-layer Si quantum dots.

ASJC Scopus subject areas

Cite this

MBE-grown Si and Si1-xGex quantum dots embedded within epitaxial Gd2O3 on Si(111) substrate for floating gate memory device. / Manna, S.; Aluguri, R.; Katiyar, A. et al.
In: NANOTECHNOLOGY, Vol. 24, No. 50, 505709, 20.12.2013.

Research output: Contribution to journal › Article › Research › peer review

Manna S, Aluguri R, Katiyar A, Das S, Laha A, Osten HJ et al. MBE-grown Si and Si1-xGex quantum dots embedded within epitaxial Gd2O3 on Si(111) substrate for floating gate memory device. NANOTECHNOLOGY. 2013 Dec 20;24(50):505709. doi: 10.1088/0957-4484/24/50/505709
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title = "MBE-grown Si and Si1-xGex quantum dots embedded within epitaxial Gd2O3 on Si(111) substrate for floating gate memory device",
abstract = "Si and Si1-xGex quantum dots embedded within epitaxial Gd2O3 grown by molecular beam epitaxy have been studied for application in floating gate memory devices. The effect of interface traps and the role of quantum dots on the memory properties have been studied using frequency-dependent capacitance-voltage and conductance-voltage measurements. Multilayer quantum dot memory comprising four and five layers of Si quantum dots exhibits a superior memory window to that of single-layer quantum dot memory devices. It has also been observed that single-layer Si 1-xGex quantum dots show better memory characteristics than single-layer Si quantum dots.",
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note = "Acknowledgments: The authors are grateful to Dr P V Satyam, R R Juluri, and A Ghosh of IOP Bhubaneswar, India, for providing the facility for the TEM measurements. The authors acknowledge the DST {\textquoteleft}FIST{\textquoteright} program for XPS facilities in the Department of Physics and Meteorology in IIT Kharagpur. The partial support from the DST-funded {\textquoteleft}MBE{\textquoteright} project is greatly acknowledged. ",
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AU - Manna, S.

AU - Aluguri, R.

AU - Katiyar, A.

AU - Das, S.

AU - Laha, A.

AU - Osten, H. J.

AU - Ray, S. K.

N1 - Acknowledgments: The authors are grateful to Dr P V Satyam, R R Juluri, and A Ghosh of IOP Bhubaneswar, India, for providing the facility for the TEM measurements. The authors acknowledge the DST ‘FIST’ program for XPS facilities in the Department of Physics and Meteorology in IIT Kharagpur. The partial support from the DST-funded ‘MBE’ project is greatly acknowledged.

PY - 2013/12/20

Y1 - 2013/12/20

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