Details
| Original language | English |
|---|---|
| Pages (from-to) | 328-337 |
| Number of pages | 10 |
| Journal | CARBON |
| Volume | 201 |
| Publication status | Published - 5 Jan 2023 |
| Externally published | Yes |
Abstract
It is important to account for variance in substrate temperature during microwave plasma-enhanced chemical vapour deposition (MPECVD) nanocrystalline diamond growth, as this has a significant impact on the uniformity of the grown film. In this work, an in-situ method of mapping the substrate temperature under MPECVD growth conditions is demonstrated, employing a mirror galvanometer to scan the field of view of a dual-wavelength pyrometer across the substrate. Temperature maps generated were compared to plasma electron densities simulated using a finite element model. An increase in temperature and simulated plasma density were seen towards the centre of the holder. The properties of nanocrystalline diamond films were mapped using ex-situ Raman spectroscopy and spectroscopic ellipsometry (SE). A greater SE-measured bulk thickness and bulk sp 3 fraction, as well as a greater first-order diamond Raman intensity and lower full width at half maximum were seen in the higher-temperature central region, demonstrating the impact of substrate temperature inhomogeneity during growth. The temperature mapping technique demonstrated allows easy evaluation of the impact of substrate holder design, microwave power and chamber pressure on substrate temperature homogeneity, and therefore optimisation of growth conditions for uniform diamond film growth.
Keywords
- CVD Diamond, Film uniformity, Mapping, Substrate temperature
ASJC Scopus subject areas
- Chemistry(all)
- General Chemistry
- Materials Science(all)
- General Materials Science
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In: CARBON, Vol. 201, 05.01.2023, p. 328-337.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Mapping the effect of substrate temperature inhomogeneity during microwave plasma-enhanced chemical vapour deposition nanocrystalline diamond growth
AU - Leigh, William G.S.
AU - Cuenca, Jerome A.
AU - Thomas, Evan L.H.
AU - Mandal, Soumen
AU - Williams, Oliver A.
N1 - Publisher Copyright: © 2022 The Authors
PY - 2023/1/5
Y1 - 2023/1/5
N2 - It is important to account for variance in substrate temperature during microwave plasma-enhanced chemical vapour deposition (MPECVD) nanocrystalline diamond growth, as this has a significant impact on the uniformity of the grown film. In this work, an in-situ method of mapping the substrate temperature under MPECVD growth conditions is demonstrated, employing a mirror galvanometer to scan the field of view of a dual-wavelength pyrometer across the substrate. Temperature maps generated were compared to plasma electron densities simulated using a finite element model. An increase in temperature and simulated plasma density were seen towards the centre of the holder. The properties of nanocrystalline diamond films were mapped using ex-situ Raman spectroscopy and spectroscopic ellipsometry (SE). A greater SE-measured bulk thickness and bulk sp 3 fraction, as well as a greater first-order diamond Raman intensity and lower full width at half maximum were seen in the higher-temperature central region, demonstrating the impact of substrate temperature inhomogeneity during growth. The temperature mapping technique demonstrated allows easy evaluation of the impact of substrate holder design, microwave power and chamber pressure on substrate temperature homogeneity, and therefore optimisation of growth conditions for uniform diamond film growth.
AB - It is important to account for variance in substrate temperature during microwave plasma-enhanced chemical vapour deposition (MPECVD) nanocrystalline diamond growth, as this has a significant impact on the uniformity of the grown film. In this work, an in-situ method of mapping the substrate temperature under MPECVD growth conditions is demonstrated, employing a mirror galvanometer to scan the field of view of a dual-wavelength pyrometer across the substrate. Temperature maps generated were compared to plasma electron densities simulated using a finite element model. An increase in temperature and simulated plasma density were seen towards the centre of the holder. The properties of nanocrystalline diamond films were mapped using ex-situ Raman spectroscopy and spectroscopic ellipsometry (SE). A greater SE-measured bulk thickness and bulk sp 3 fraction, as well as a greater first-order diamond Raman intensity and lower full width at half maximum were seen in the higher-temperature central region, demonstrating the impact of substrate temperature inhomogeneity during growth. The temperature mapping technique demonstrated allows easy evaluation of the impact of substrate holder design, microwave power and chamber pressure on substrate temperature homogeneity, and therefore optimisation of growth conditions for uniform diamond film growth.
KW - CVD Diamond
KW - Film uniformity
KW - Mapping
KW - Substrate temperature
UR - http://www.scopus.com/inward/record.url?scp=85138177973&partnerID=8YFLogxK
U2 - 10.1016/j.carbon.2022.09.036
DO - 10.1016/j.carbon.2022.09.036
M3 - Article
VL - 201
SP - 328
EP - 337
JO - CARBON
JF - CARBON
SN - 0008-6223
ER -