Details
| Original language | English |
|---|---|
| Article number | 091604 |
| Journal | Applied physics letters |
| Volume | 104 |
| Issue number | 9 |
| Publication status | Published - 3 Mar 2014 |
| Externally published | Yes |
Abstract
We manipulate the negative fixed charge density Qf at the c-Si/Al2O3 interface by applying a bias voltage in a metal-oxide-semiconductor configuration or by depositing corona charges onto the Al2O3 film. A significant increase of the negative fixed charge density from |Qf| = 4 × 1012 cm-2 to values above 1013 cm-2 is observed for surface Fermi energies close to or within the silicon conduction band. The additional charges are shown to be partly unstable under annealing or changing the polarity of the bias voltage. Our experimental data are best described by assuming at least three different types of charge traps responsible for the formation of the negative fixed charge density at the c-Si/Al2O3 interface.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
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In: Applied physics letters, Vol. 104, No. 9, 091604, 03.03.2014.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Manipulating the negative fixed charge density at the c-Si/Al 2O3 interface
AU - Werner, Florian
AU - Schmidt, Jan
PY - 2014/3/3
Y1 - 2014/3/3
N2 - We manipulate the negative fixed charge density Qf at the c-Si/Al2O3 interface by applying a bias voltage in a metal-oxide-semiconductor configuration or by depositing corona charges onto the Al2O3 film. A significant increase of the negative fixed charge density from |Qf| = 4 × 1012 cm-2 to values above 1013 cm-2 is observed for surface Fermi energies close to or within the silicon conduction band. The additional charges are shown to be partly unstable under annealing or changing the polarity of the bias voltage. Our experimental data are best described by assuming at least three different types of charge traps responsible for the formation of the negative fixed charge density at the c-Si/Al2O3 interface.
AB - We manipulate the negative fixed charge density Qf at the c-Si/Al2O3 interface by applying a bias voltage in a metal-oxide-semiconductor configuration or by depositing corona charges onto the Al2O3 film. A significant increase of the negative fixed charge density from |Qf| = 4 × 1012 cm-2 to values above 1013 cm-2 is observed for surface Fermi energies close to or within the silicon conduction band. The additional charges are shown to be partly unstable under annealing or changing the polarity of the bias voltage. Our experimental data are best described by assuming at least three different types of charge traps responsible for the formation of the negative fixed charge density at the c-Si/Al2O3 interface.
UR - http://www.scopus.com/inward/record.url?scp=84896747369&partnerID=8YFLogxK
U2 - 10.1063/1.4867652
DO - 10.1063/1.4867652
M3 - Article
AN - SCOPUS:84896747369
VL - 104
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 9
M1 - 091604
ER -