Details
| Original language | English |
|---|---|
| Pages (from-to) | 930-935 |
| Number of pages | 6 |
| Journal | Semiconductors |
| Volume | 53 |
| Issue number | 7 |
| Early online date | 2 Jul 2019 |
| Publication status | Published - Jul 2019 |
Abstract
The longitudinal and Hall components of the resistivity tensor are measured in structures with multiple HgTe layers 16 nm thick in magnetic fields to 12 T at temperatures from 1.5 to 300 K. The slope of the magnetic-field dependence of the Hall resistance is found to change its sign at a certain critical temperature Tc = 5 and 10 K in the two studied samples, which indicates the presence of two types of charge carriers and a change in the relation between their contributions to the Hall resistance with temperature. The low critical temperature and manifestation of the “two-component” nature of the Hall curves only at T > Tc prove that the ground state of the system at T = Tc is gapless. At higher temperatures (20 K < T < 200 K), the Hall concentration is proportional to the temperature with good accuracy. The description of the charge-carrier dispersion laws by the 8-band kp model taking into account Γ8-band-edge splitting caused by mechanical stresses, which forms both types of state in HgTe, makes it possible to quantitatively describe the observed magnetotransport features. It is shown that they are associated with the simultaneous filling of electron and hole states formed as a result of mixing interface states responsible for the topological-insulator phase and the quantum-confined states in the Γ8 band.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Semiconductors, Vol. 53, No. 7, 07.2019, p. 930-935.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Magnetotransport Spectroscopy of the Interface, Quantum Well, and Hybrid States in Structures with 16-nm-Thick Multiple HgTe Layers
AU - Vasilyeva, G. Yu
AU - Greshnov, A. A.
AU - Vasilyev, Yu B.
AU - Mikhailov, N. N.
AU - Usikova, A. A.
AU - Haug, Rolf
N1 - Funding information: G.Yu. Vasilyeva thanks Russian Foundation for Basic Research. The study was supported by the Russian Science Foundation, grant no. 17-72-10134.
PY - 2019/7
Y1 - 2019/7
N2 - The longitudinal and Hall components of the resistivity tensor are measured in structures with multiple HgTe layers 16 nm thick in magnetic fields to 12 T at temperatures from 1.5 to 300 K. The slope of the magnetic-field dependence of the Hall resistance is found to change its sign at a certain critical temperature Tc = 5 and 10 K in the two studied samples, which indicates the presence of two types of charge carriers and a change in the relation between their contributions to the Hall resistance with temperature. The low critical temperature and manifestation of the “two-component” nature of the Hall curves only at T > Tc prove that the ground state of the system at T = Tc is gapless. At higher temperatures (20 K < T < 200 K), the Hall concentration is proportional to the temperature with good accuracy. The description of the charge-carrier dispersion laws by the 8-band kp model taking into account Γ8-band-edge splitting caused by mechanical stresses, which forms both types of state in HgTe, makes it possible to quantitatively describe the observed magnetotransport features. It is shown that they are associated with the simultaneous filling of electron and hole states formed as a result of mixing interface states responsible for the topological-insulator phase and the quantum-confined states in the Γ8 band.
AB - The longitudinal and Hall components of the resistivity tensor are measured in structures with multiple HgTe layers 16 nm thick in magnetic fields to 12 T at temperatures from 1.5 to 300 K. The slope of the magnetic-field dependence of the Hall resistance is found to change its sign at a certain critical temperature Tc = 5 and 10 K in the two studied samples, which indicates the presence of two types of charge carriers and a change in the relation between their contributions to the Hall resistance with temperature. The low critical temperature and manifestation of the “two-component” nature of the Hall curves only at T > Tc prove that the ground state of the system at T = Tc is gapless. At higher temperatures (20 K < T < 200 K), the Hall concentration is proportional to the temperature with good accuracy. The description of the charge-carrier dispersion laws by the 8-band kp model taking into account Γ8-band-edge splitting caused by mechanical stresses, which forms both types of state in HgTe, makes it possible to quantitatively describe the observed magnetotransport features. It is shown that they are associated with the simultaneous filling of electron and hole states formed as a result of mixing interface states responsible for the topological-insulator phase and the quantum-confined states in the Γ8 band.
UR - http://www.scopus.com/inward/record.url?scp=85068776005&partnerID=8YFLogxK
U2 - 10.1134/S1063782619070248
DO - 10.1134/S1063782619070248
M3 - Article
AN - SCOPUS:85068776005
VL - 53
SP - 930
EP - 935
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 7
ER -