Details
| Original language | English |
|---|---|
| Pages (from-to) | 192-196 |
| Number of pages | 5 |
| Journal | Physica B: Physics of Condensed Matter |
| Volume | 184 |
| Issue number | 1-4 |
| Publication status | Published - Feb 1993 |
| Externally published | Yes |
Abstract
In an AlGaAs/GaAs heterostructure magnetotransport has been measured along an edge which can be influenced by an in-plane-gate. The in-plane-gate has been produced by writing an isolating line with a focused-ion beam of 100 keV Ga+-ions. A drastic increase of the amplitude of the Shubnikov-de Haas oscillations is observed for positive gate voltages applied to the in-plane-gate. This increase in amplitude is attributed to an increased coupling between edge states due to a decreased distance to the scattering centers generated by the focused-ion beam.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Physica B: Physics of Condensed Matter, Vol. 184, No. 1-4, 02.1993, p. 192-196.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Magnetotransport properties of hall-bar with focused-ion-beam written in-plane-gate
AU - Haug, R. J.
AU - Wieck, A. D.
AU - von Klitzing, K.
AU - Ploog, K.
N1 - Funding information: Valuabled iscussionws ith T. Bever, R.R. Ger-hardts and A.H. MacDonald are gratefullya c-knowledgedP. art of this work has been supported by the Bundesministeriufm/Jr Forschung und Technologie.
PY - 1993/2
Y1 - 1993/2
N2 - In an AlGaAs/GaAs heterostructure magnetotransport has been measured along an edge which can be influenced by an in-plane-gate. The in-plane-gate has been produced by writing an isolating line with a focused-ion beam of 100 keV Ga+-ions. A drastic increase of the amplitude of the Shubnikov-de Haas oscillations is observed for positive gate voltages applied to the in-plane-gate. This increase in amplitude is attributed to an increased coupling between edge states due to a decreased distance to the scattering centers generated by the focused-ion beam.
AB - In an AlGaAs/GaAs heterostructure magnetotransport has been measured along an edge which can be influenced by an in-plane-gate. The in-plane-gate has been produced by writing an isolating line with a focused-ion beam of 100 keV Ga+-ions. A drastic increase of the amplitude of the Shubnikov-de Haas oscillations is observed for positive gate voltages applied to the in-plane-gate. This increase in amplitude is attributed to an increased coupling between edge states due to a decreased distance to the scattering centers generated by the focused-ion beam.
UR - http://www.scopus.com/inward/record.url?scp=0027541588&partnerID=8YFLogxK
U2 - 10.1016/0921-4526(93)90347-9
DO - 10.1016/0921-4526(93)90347-9
M3 - Article
AN - SCOPUS:0027541588
VL - 184
SP - 192
EP - 196
JO - Physica B: Physics of Condensed Matter
JF - Physica B: Physics of Condensed Matter
SN - 0921-4526
IS - 1-4
ER -