Details
| Original language | English |
|---|---|
| Pages (from-to) | 471-474 |
| Number of pages | 4 |
| Journal | JETP letters |
| Volume | 96 |
| Issue number | 7 |
| Publication status | Published - 1 Dec 2012 |
Abstract
The magnetoresistance of single-layer graphene on a Si/SiO2 substrate is measured in the temperature range of 2. 5-150 K. It is found that, at high enough temperatures and away from the Dirac point, the resistance varies as the square root of the magnetic field. This agrees with a recent theoretical calculation of the magnetoresistance for the case of charge-carrier scattering by defects characterized by a short-range potential.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
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In: JETP letters, Vol. 96, No. 7, 01.12.2012, p. 471-474.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Magnetoresistance of single-layer graphene under the conditions of short-range potential scattering
AU - Vasil'eva, G. Yu
AU - Alekseev, P. S.
AU - Ivanov, Yu L.
AU - Vasil'ev, Yu B.
AU - Smirnov, D.
AU - Schmidt, H.
AU - Haug, R. J.
AU - Gouider, F.
AU - Nachtwei, G.
N1 - Funding information: We are grateful to I.V. Gornyi, A.P. Dmitriev, and V.Yu. Kachorovskii for discussions of the results of this study. This work was supported by the Russian Foun dation for Basic Research, Deutsche Forschungsge meinschaft, and the Presidium of the Russian Acad emy of Sciences.
PY - 2012/12/1
Y1 - 2012/12/1
N2 - The magnetoresistance of single-layer graphene on a Si/SiO2 substrate is measured in the temperature range of 2. 5-150 K. It is found that, at high enough temperatures and away from the Dirac point, the resistance varies as the square root of the magnetic field. This agrees with a recent theoretical calculation of the magnetoresistance for the case of charge-carrier scattering by defects characterized by a short-range potential.
AB - The magnetoresistance of single-layer graphene on a Si/SiO2 substrate is measured in the temperature range of 2. 5-150 K. It is found that, at high enough temperatures and away from the Dirac point, the resistance varies as the square root of the magnetic field. This agrees with a recent theoretical calculation of the magnetoresistance for the case of charge-carrier scattering by defects characterized by a short-range potential.
UR - http://www.scopus.com/inward/record.url?scp=84871339322&partnerID=8YFLogxK
U2 - 10.1134/S0021364012190137
DO - 10.1134/S0021364012190137
M3 - Article
AN - SCOPUS:84871339322
VL - 96
SP - 471
EP - 474
JO - JETP letters
JF - JETP letters
SN - 0021-3640
IS - 7
ER -